1986
DOI: 10.1117/12.952076
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Performance Of Large Area Particle Detectors

Abstract: Silicon charged particle detectors, made by a newly developed process, have been studied. Passivated ion -implanted junctions are fabricated in high resistivity FZ n -type Silicon, using planar technology. For many charged particle detector applications the sensitive volume of the diode has to be high : active areas of several cm' and thicknesses of 100 to 500 micron are wanted. Diodes with a high breakdown voltage (100 to 500 volts) are required so that the full wafer thickness can be depleted. The diode leak… Show more

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