Performance of Bulk Semi-Insulating GaAs-Based Sensors with Different Pixel Sizes for Timepix Radiation Camera

Kubanda, D.; Затько, Б.; Žemlička, J.; Sazatova, A.; Boháček, P.; Sekacova, M.; Kovacovab, E.; Necasa, V.

doi:10.1109/asdam.2018.8544509

Cited by 2 publications

(1 citation statement)

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“…Silicon is a well-known and widely used material, however, it has limited detection efficiency to X-rays and gamma rays compared to high-Z materials. Therefore, other high-Z materials are investigated, such as CdTe or gallium arsenide (GaAs) either semi-insulating or doped with chromium [2][3][4][5][6]. Due to the inherent X-ray fluorescence and high polarisation effects in CdTe leading to degradation of detector performance, the use of GaAs with high radiation resistance and high mobility charge carriers is also desirable.…”

Section: Introductionmentioning

confidence: 99%

Spectral tracking of proton beams by the Timepix3 detector with GaAs, CdTe and Si sensors

et al. 2023

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Position and directional-sensitive spectrometry of energetic charged particles can be performed with high resolution and wide dynamic range (energy, direction) with the hybrid semiconductor pixel detectors Timepix/Timepix3. The choice of semiconductor sensor material, thickness, and properties such as the reverse bias voltage, greatly determine detector sensitivity and resolving power for spectrometry and particle tracking. We investigated and evaluated the spectral tracking resolving power such as deposited energy and linear-energy-transfer (LET) spectra with the Timepix3 detector with different semiconductor sensors, based on GaAs:Cr, CdTe, and Si, using well-defined radiation sources in terms of radiation type (protons), energy, and incident direction to the detector sensor. Measurements of particle incident direction in a wide range were performed with collimated monoenergetic proton beams of various energies in the range 8–31 MeV at the U120-M cyclotron at the NPI CAS Rez near Prague. All detectors were per-pixel calibrated. This work enables to examine and perform a detailed study of charge sharing and charge collection efficiency in semiconductor sensors. The results serve to optimise the detector chip-sensor assembly configuration for measurements especially with high-LET particles in ion radiotherapy and outer space. The work underway includes evaluation of newly refined semi-insulating GaAs sensors and improved radiation hard semiconductor sensors SiC.

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