Performance analysis of Z‐shaped gate dielectric modulated (DM) tunnel field‐effect transistor‐(TFET) based biosensor with extended horizontal N+ pocket

Abstract

In this paper, a Z‐shaped gate dielectric modulated (DM) tunnel field‐effect transistor‐(TFET) based biosensor with extended horizontal n+ pocket in the source region is proposed and different performances were investigated. Effective structural modification has been done by considering the filed induced quantum confinements effects to enhance the various performances of the device in terms of ON current (Ion) and threshold voltage. The horizontal pocket beneath the source region of the ZHP‐DM‐TFET biosensor enables the vertical tunneling besides the lateral tunneling which leads to enhancement of device performance in terms of short channel effects, low OFF the current. A comparative study is also carried with existing biosensors and it is observed that the ZHP‐DM‐TFET biosensor shows superiority over the other biosensors due to its irregular arrangement of the gate and the horizontal n+ pocket provides. The sensitivity analysis of the device was further investigated by varying the dielectric constant of the biomolecules inside the nanocavity for the value from K = 1 to K = 10. The ZHP‐DM‐TFET biosensor shows a significant improvement in threshold voltage sensitivity 20% (k = 2), 35%(K = 4) and a 102 improvement in Ion/Ioff ratio. The impact of the thickness of the n+ pocket (pocket) over the sensitivity of the biosensor is also investigated.

Nanowire gate all around-TFET-based biosensor by considering ambipolar transport

“…5a, we observed that even the dielectric constant value is doubled, it shows a little variation in the ambipolar current, which is neglected and treated as constant. This is due to the effect of the energy band profile modulation (BPM), where the further widening of the bandgap is not possible because of the limitation on the minimum doping profile of the drain [27][28][29][30][31]. Even the surrounded gate structure shows high controllability over the channel, but the technique overlapping gate-on-drain depends on drain doping concentration.…”

“…Even the surrounded gate structure shows high controllability over the channel, but the technique overlapping gate-on-drain depends on drain doping concentration. Here, we considered the drain doping of 5 × 10 18 , which cannot further reduce due to the sensor's construction constraints [27][28][29][30][31]. Figure 5b represents the potential variation of the GAA-TFET biosensor for different dielectric constant values of the biomolecules.…”

“…The measured sensitivity values from Table 2 shows that the proposed biosensor's sensitivity increases linearly with the dielectric constant value up to K = 5 and, for higher dielectric values of biomolecules, i.e., K > 5, there is a slight downfall of sensitivity which is negligible and treated as constant. For the higher dielectric constant value of the biomolecules, the nanowire GAA-TFET shows no variation in the sensitivity because of the drain doping limitation [27][28][29][30][31][32]. The bandgap cannot increase further near the channel-drain junction even at the higher dielectric constant value of the biomolecules.…”

“…The nanowire GAA-TFET biosensor shows excellent improvement in the device sensitivity in terms of high drain current variation. Apart from this, the nanowire GAA-TFET biosensor is capable of exhibiting high, prominent threshold voltage characteristics [22][23][24][25][26][27][28][29][30][31][32]. The device's surrounded gate structure facilitates the gate with high controllability over the intrinsic channel and makes it operate at low voltages.…”

Empirical Wavelet Transform Method for Enhancement of Medical Image Fusion

“…Separate Cosine Transfigure (DCT) and Multi-Scale Transform are often utilised transforms for image emulsion (MST). Deep literacy (DL) has recently flourished in a number of image processing and computer vision operations [7][8][9][10][11][12][13][14][15][16][17].…”