Performance analysis of GeSn-alloy-based multiple quantum well transistor laser

Ranjan, Ravi; Pareek, Prakash; Askari, Syed Sadique Anwer; Das, Mausumi

doi:10.1117/12.2290570

Cited by 5 publications

(1 citation statement)

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“…Unfortunately, the low value of optical confinement factor hampered the performance of single quantum well transistor laser (SQWTL) [13]. In order to circumvent this issue, concerned researchers introduced multiple quantum well (MQW) structure and performance parameters like threshold current density, current gain and output photon density were evaluated for SiGeSn/GeSn MQW transistor laser [14][15][16][17]. The frequency response prediction of MQWTL is very crucial in order to gauge its modulation bandwidth.…”

Section: Introductionmentioning

confidence: 99%

Numerical design and frequency response of MQW transistor lasers based entirely on group IV alloys

Ranjan

Pareek²,

Das

et al. 2021

J Comput Electron

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In this work, a theoretical model is developed for n-p-n mid-infrared transistor laser (TL) with strain-balanced Ge 0.85 Sn 0.15 multiple quantum well (MQW) structure in the base. Variation of optical confinement factor, modal gain and threshold current density have been rigorously investigated for different number of QWs (N) in MQW structure. The result shows that overall optical confinement factor and modal gain increase with N. The frequency response of MQWTL for common base (CB) configuration is estimated from small signal relationship between the photon density and emitter current density by solving laser rate equation and continuity equation considering the virtual states as a conversion mechanism. Increment of N causes modulation bandwidth to initially increase and then decreases with N, which reveals a shifting of device nature for higher values of N. The results also suggest that on judicious selection of N, the proposed device can become a viable monolithic light source.

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