Perfectly imperfect

doi:10.1038/nnano.2010.102

Cited by 3 publications

(1 citation statement)

References 6 publications

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“…BSFs in wurtzite structure ZnO can be considered as a sheet of zinc blende structure (ZB) embedded in the parent crystal [9]. Due to the smaller bandgap of the ZB modification, these BSFs form perfect ZB-like quantum wells in a WZ matrix [10]. Thus, once the formation of SFs is 'engineered', it could transform a challenging defect-related problem into a groundbreaking advantage for crystal phase band gap engineering [4].…”

Section: Introductionmentioning

confidence: 99%

Crystal phase engineered quantum wells in ZnO nanowires

et al. 2013

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We report the fabrication of quantum wells in ZnO nanowires (NWs) by crystal phase engineering approach. Basal plane stacking faults (BSF) in wurtzite structure can be considered as a minimal segment of zinc blende. Due to the existing band offsets at wurtzite (WZ) / zinc blende (ZB) materials interface incorporation of BSF of high density into ZnO NWs results in type II band alignment. Thus, the BSF structure acts as a quantum well for electrons and a potential barrier for holes in the valence band.We have studied the photoluminescence (PL) properties of ZnO NWs containing high concentration of BSF in comparison to high quality ZnO NWs of pure wurtzite structure. It is revealed that BSF form quantum wells in WZ ZnO nanowires, providing an additional luminescence peak at 3.329 eV at 4 K. The luminescence mechanism is explained as indirect exciton transition due to the recombination of electrons in the QW conduction band to holes localized near the BSF. The binding energy of electrons is found to be around 100 meV, while the excitons are localised with binding energy of holes ~ 5 meV, which is due to the coupling of BSF, which form QW-like structures.2

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Section: Introductionmentioning

confidence: 99%

Crystal phase engineered quantum wells in ZnO nanowires

et al. 2013

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Abnormal electronic transport and negative differential resistance of graphene nanoribbons with defects

Yang

2011

Applied Physics Letters

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Electronic transport properties of zigzag graphene nanoribbons (GNRs) with two kinds of triangular defects are explored by using an ab-initio method. At a certain bias, the current of the GNR with an upward-triangle defect can be surprisingly larger than that of the perfect GNR due to the defect-induced symmetry breaking and more conductive channels. Dissimilarly, if the orientation of the triangle is changed rightward, the current is depressed much and shows negative differential resistance behavior. Our findings indicate that defect designs can be an efficient way to tune the electronic transport of GNR nanodevices.

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Crystal Phases in III--V Nanowires: From Random Toward Engineered Polytypism

Caroff

Bolinsson

Johansson

2011

IEEE J. Select. Topics Quantum Electron.

176

206

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Recent relationships between Papua New Guinea (PNG), the International Monetary Fund (IMF), and the World Bank have been stormy. At various points in the loan negotiations students rioted, the Prime Minister told the World Bank to 'go to hell', and the World Bank's chief negotiator defected to the PNG side. He was later jailed. The relationship between the Asian Development Bank (ADB) and its South Pacific clients were also sometimes uneasy, and led its Board of Directors to commission a self-assessment (Knapman and Saldhanha 1999). The article compares the use of loan conditions by the International Financial Institutions (IFIs) in Papua New Guinea and six small island states of the South Pacific. In spite of their juridical sovereignty, their small size may make them particularly vulnerable to international pressure (Warrington 1998:101). It is part of a wider study of 'institutional transfer ' which sees 'conditionality' as one of the mechanisms by which institutions are borrowed, transplanted or imposed on other countries. Conditionality lies on a continuum that runs from voluntary 'lesson drawing' at one extreme, to direct imposition of a policy on the other (Dolowitz and Marsh 1996, 2000).

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Perfectly imperfect

Cited by 3 publications

References 6 publications

Crystal phase engineered quantum wells in ZnO nanowires

Crystal phase engineered quantum wells in ZnO nanowires

Abnormal electronic transport and negative differential resistance of graphene nanoribbons with defects

Crystal Phases in III--V Nanowires: From Random Toward Engineered Polytypism

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