Perfect selective alignment of nitrogen-vacancy centers in diamond

Fukui, Tsuguya; Doi, Yuki; Miyazaki, Takehide; Miyamoto, Yoshiyuki; Kato, Hiromitsu; Matsumoto, Tetsuya; Makino, Toshiharu; Yamasaki, Satoshi; Morimoto, Ryusuke; Tokuda, Norio; Hatano, Mutsuko; Sakagawa, Yuki; Morishita, Hiroki; Tashima, Toshiyuki; Miwa, Shinji; Suzuki, Y.; Mizuochi, Norikazu

doi:10.7567/apex.7.055201

Cited by 93 publications

(93 citation statements)

References 27 publications

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“…One interesting direction explored recently was investigating the surface orientation rather than the (100) direction, which is usually studied; recently the (111) surface has been extensively studied. [169][170][171] Other defects in diamond, such as silicon vacancy complexes, may be of interest for sensing in the future. Such defects have been studied recently using isotopically enriched 12 C diamond.…”

Section: Diamond Quantum Sensingmentioning

confidence: 99%

Isotope engineering of silicon and diamond for quantum computing and sensing applications

2014

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Some of the stable isotopes of silicon and carbon have zero nuclear spin, whereas many of the other elements that constitute semiconductors consist entirely of stable isotopes that have nuclear spins. Silicon and diamond crystals composed of nuclear-spin-free stable isotopes ( 28 Si, 30 Si, or 12 C) are considered to be ideal host matrixes to place spin quantum bits (qubits) for quantum-computing and -sensing applications, because their coherent properties are not disrupted thanks to the absence of host nuclear spins. The present paper describes the state-of-theart and future perspective of silicon and diamond isotope engineering for development of quantum information-processing devices.

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Section: Diamond Quantum Sensingmentioning

confidence: 99%

Isotope engineering of silicon and diamond for quantum computing and sensing applications

2014

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“…In (111)-oriented synthetic diamond, it has been reported that the NV centers can be preferentially oriented along the [111] crystallographic axis. [18][19][20][21] Attracting enormous attention, such a special diamond substrate will lead to enhanced sensitivity in metrology as well as atomically precise quantum information devices. Our resonator circuit design will be fully compatible with these applications.…”

Section: -7mentioning

confidence: 99%

Polarization- and frequency-tunable microwave circuit for selective excitation of nitrogen-vacancy spins in diamond

Herrmann

Appleton

Sasaki

et al. 2016

Applied Physics Letters

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We report on a planar microwave resonator providing arbitrarily polarized oscillating magnetic fields that enable selective excitation of the electronic spins of nitrogen-vacancy (NV) centers in diamond. The polarization plane is parallel to the surface of diamond, which makes the resonator fully compatible with (111)-oriented diamond. The field distribution is spatially uniform in a circular area with a diameter of 4 mm, and a near-perfect circular polarization is achieved. We also demonstrate that the original resonance frequency of 2.8 GHz can be varied in the range of 2−3.2 GHz by introducing varactor diodes that serve as variable capacitors.In recent years, the nitrogen-vacancy (NV) center in diamond has emerged as a promising platform for quantum information processing and nanoscale metrology. 1-7At the heart of both technologies lies an exquisite control of the NV electronic spin.8 The ground state of the negatively charged NV center is an S = 1 spin triplet with the m S = ±1 sublevels lying D gs = 2.87 GHz above the m S = 0 sublevel under zero magnetic field. The external static magnetic field B dc applied parallel to the quantization axis n NV (along one of the 111 crystallographic axes) further splits the m S = ±1 levels by 2γB dc , with γ = 28 GHz/T being the gyromagnetic ratio of the NV electronic spin [see Fig. 1].Initialization, control, and readout of this three-level V system are accomplished by an optically detected magnetic resonance (ODMR) technique, in which opticalLin. pol.Cir. pol. pumping by a green (∼500 nm) laser serves to initialize and read out the NV spin and short pulses of oscillating magnetic fields B ac (∼2.87 GHz) drive it into an arbitrary quantum-mechanical superposition. In ideal magnetic resonance experiments, B ac and B dc ( n NV ) should be orthogonal, 9,10 whereas in reality the direction of B ac at the location of the target NV center is hard to control or even know about. This is because a metal wire or a microfabricated stripline, commonly used for experiments with NV centers, generates B ac that is highly dependent on the positions. Moreover, B ac from these sources is linearly polarized, while the NV spin has clear transition selection rules; The m S = 0 ↔ 1 (−1) transition is driven by σ + (σ − ) circularly polarized fields. To fully exploit the S = 1 nature of the NV spin for quantum information and metrology applications, 11-14 it is highly desired to have a reliable means to generate arbitrarily polarized microwave fields.A few configurations for polarization-controlled B ac have been adopted for the NV system. A popular one is a pair of crisscrossed striplines, which generates desired fields only beneath the crossing point.15,16 A pair of parallel striplines may be a simpler alternative.17 In both examples, however, it is by design difficult or impossible to make the polarization plane perpendicular to n NV and thus to B dc .In this paper, we present a simple planar resonator circuit providing spatially uniform, arbitrarily polarized, and in-plane microwave magne...

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“…In future sensor fabrication, improvements to the magnetic sensitivity could be realized by utilizing (111) surfaces to obtain a single orientation of NV centers (C → 4C) [32][33][34]. Additionally, optimizing the initial nitrogen density n N such that δν 0 ≈ δν dp ≈ 10 kHz could result in a further ∼10-fold decrease in the ODMR linewidth.…”

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High density nitrogen-vacancy sensing surface created via He+ ion implantation of 12C diamond

Kleinsasser

Stanfield

Banks

et al. 2016

Applied Physics Letters

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We present a promising method for creating high-density ensembles of nitrogen-vacancy centers with narrow spin-resonances for high-sensitivity magnetic imaging. Practically, narrow spinresonance linewidths substantially reduce the optical and RF power requirements for ensemble-based sensing. The method combines isotope purified diamond growth, in situ nitrogen doping, and helium ion implantation to realize a 100 nm-thick sensing surface. The obtained 10 17 cm −3 nitrogen-vacancy density is only a factor of 10 less than the highest densities reported to date, with an observed spin resonance linewidth over 10 times more narrow. The 200 kHz linewidth is most likely limited by dipolar broadening indicating even further reduction of the linewidth is desirable and possible.The nitrogen-vacancy (NV) center in diamond is a versatile room-temperature magnetic sensor which can operate in a wide variety of modalities, from nanometerscale imaging with single centers [1, 2] to sub-picotesla sensitivities using ensembles [3]. Ensemble-based magnetic imaging, utilizing a two-dimensional array of NV centers [4][5][6], combines relatively high spatial resolution with high magnetic sensitivity. These arrays are ideal for imaging applications ranging from detecting magnetically tagged biological specimens [7,8] to fundamental studies of magnetic thin films [9]. A key challenge for array-based sensors is creating a high density of NV centers while still preserving the desirable NV spin properties. Here we report on a promising method which combines isotope purified diamond growth, in situ nitrogen doping and helium ion implantation. In the 100 nmthick sensor layer, we realize an NV density of 10 17 cm −3 with a 200 kHz magnetic resonance linewidth. This corresponds to a a DC magnetic sensitivity ranging from 170 nT (current experimental conditions) to 10 nT (optimized experimental conditions) for a 1 µm 2 pixel and 1 second measurement time.Magnetic sensing utilizing NV centers is based on optically-detected magnetic resonance (ODMR) [10][11][12]. In the ideal shot-noise limit, the DC magnetic sensitivity is given by [9] in which h/gµ B = 36 µT/MHz, C is the resonance dip contrast, η is the photon collection efficiency, δν is the full-width at half maximum resonance linewidth, n N V is the density of NV centers in imaging pixel volume V , and t is the measurement time. From Eq. 1, it is apparent that to minimize δB ideal for a given linewidth δν, one would like to maximize the NV density n N V . Increasing n N V , however, can also increase δν. For example, lattice damage during the NV creation process can create inhomogeneous strain-fields [13]. More fundamentally, eventually NV-NV and NV-N dipolar interactions will contribute to line broadening. This dipolar broadening, δν dp , is proportional to the nitrogen density n N [14,15]. Since n N V is typically proportional to n N , we can divide δ ν into two components, δν = δν 0 + δν dp = δν 0 + An N V , to obtainin which δν 0 depends on factors independent of NV density (e.g. hyperfi...

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Perfect selective alignment of nitrogen-vacancy centers in diamond

Cited by 93 publications

References 27 publications

Isotope engineering of silicon and diamond for quantum computing and sensing applications

Isotope engineering of silicon and diamond for quantum computing and sensing applications

Polarization- and frequency-tunable microwave circuit for selective excitation of nitrogen-vacancy spins in diamond

High density nitrogen-vacancy sensing surface created via He+ ion implantation of 12C diamond

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