PCB embedded inductor for high-frequency ZVS SEPIC converter

Dou, Yi; Ouyang, Ziwei; Thummala, Prasanth; Andersen, Michael A. E.

doi:10.1109/apec.2018.8340994

Cited by 13 publications

(10 citation statements)

References 12 publications

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“…At this value of resistance R 0 , converters are in CCM mode. By changing the value of input voltage V in , the output voltage V out of the boost converter can be computed from the dependence in Equation (10) or from Equation (13) for the buck converter. Computations were performed at a constant value of the control signal duty cycle d = 0.5.…”

Section: Results Of Computationsmentioning

confidence: 99%

“…Direct current (DC)-DC converters, which are used, e.g., in switch mode power supplies and semiconductor devices, also contain magnetic elements used to store electrical energy [1]. In recent years, more and more papers focused on modeling power losses in magnetic elements and on examining the influence of power losses in these elements on the characteristics of electronic equipment [1][2][3][4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

“…The aspiration to minimize the sizes of power supplies and to increase the frequency of the control signal causes an increase in power loss density in ferromagnetic cores and, consequently, limits the watt-hour efficiency of DC-DCconverters [2,[8][9][10]12]. Losses in magnetic material can be caused, e.g., by hysteresis of the magnetizing curve or by eddy currents [13].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Influence of Power Losses in the Inductor Core on Characteristics of Selected DC–DC Converters

Górecki

Detka

2019

Energies

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The paper presents the results of a computer simulation illustrating the influence of power losses in the core of an inductor based on the characteristics of buck and boost converters. In the computations, the authors’ model of power losses in the core is used. Correctness of this model is verified experimentally for three different magnetic materials. Computations are performed with the use of this model and the Excel software for inductors including cores made of ferrite, powdered iron, and nanocrystalline material in a wide range of load resistance, as well as input voltage of both the considered converters operating at different values of switching frequency. The obtained computation results show that power losses in the inductor core and watt-hour efficiency of converters strongly depend on the material used to make this core, in addition to the input voltage and parameters of the control signal and load resistance of the considered converters. The obtained results of watt-hour efficiency of the considered direct current (DC)–DC converters show that it changes up to 30 times in the considered ranges of the mentioned factors. In turn, in the same operating conditions, values of power losses in the considered cores change from a fraction of a watt to tens of watts. The paper also considers the issue of which material should be used to construct the inductor core in order to obtain the highest value of watt-hour efficiency at selected operation conditions of the considered converters.

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Section: Results Of Computationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Influence of Power Losses in the Inductor Core on Characteristics of Selected DC–DC Converters

Górecki

Detka

2019

Energies

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“…It can be seen from ( 13) and circuit operating principles that the leakage inductance Ld should be minimized in transformer design in order to provide low voltage stress for the relevant passive components and the main switches. Since planar print circuit board (PCB) windings are chosen for the transformer design, ac resistance is aimed to be reduced [23]. Thus, interleaving structure is adopted for this case [24] [25].…”

Section: Magnetics Designmentioning

confidence: 99%

Resonant Push–Pull Converter With Flyback Regulator for MHz High Step-Up Power Conversion

Wang

Ouyang

et al. 2021

IEEE Trans. Ind. Electron.

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“…Alharbi et al (2018) realizes interleaved SEPIC converter by using SiC power switch for renewable application. In order to improve power density of high switching frequency SEPIC converter using GaN switch with PCB embedded inductor is presented in Dou et al (2018). Maharjan et al (2017) carries out the application of SEPIC converter using separately inductors with SiC and Si power switches for battery charging purpose.…”

Section: Introductionmentioning

confidence: 99%

Si ve GaN Yarı İletken tabanlı SEPIC DC-DC Led Sürücülerin Karşılaştırılması

Şehirli¹

2020

European Journal of Science and Technology

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Recently, in power electronics, studies on creating new semiconductor concept is so popular. As a result of this studies, using of wide band gap semiconductors (WBG) such as Silicon Carbide (SiC) Mosfets and Gallium Nitride High Electron Mobility Transistors (GaN-HEMT) has gained much attention due to the its high switching frequncy capability and providing high power density feature. Furthermore, in the field of illumination, power leds is so eye cathing because of their high efficinecy feature with respect to other kind of illumination such as metal halide and incandesant bulbs. In addition, to operate power leds, DC power is required and the most efficient way to provide required DC power is to use one of the DC-DC converter topologies. Buck-boost derived converter topology is the best solution fort that purpose. One of the flashiest topologies is single ended primary inductor (SEPIC) converter. Therefore, in this paper, comparison of SEPIC DC-DC converter-based power led driver using silicon (Si) and enhancement mode (E-mode) GaN-HEMT based power switch is made. Also, SEPIC led drivers are designed for 10W power led and implementations for both power switches are realized. In addition, switching frequency of converters is chosen as 100kHz and dsPIC30F4011 micro controller is used to produce PWM signal for power switches and to limit maximum current of power leds by using ACS712 current sensor. By means of the applications, power led current, power led voltage, input current, input voltage and input side inductor current, switch voltage, gate resistor voltage are measured and compared for both Si and GaN based power switches. As a result of comparisons, altough similar results are obtained, circuit using Si MOSFET has slightly higher efficiency than E-Mode GaN-HEMT used circuit. Besides, circuit using E-Mode GaN-HEMT is more sensitivity to the noises and needs extra care for its soldering.

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PCB embedded inductor for high-frequency ZVS SEPIC converter

Cited by 13 publications

References 12 publications

Influence of Power Losses in the Inductor Core on Characteristics of Selected DC–DC Converters

Influence of Power Losses in the Inductor Core on Characteristics of Selected DC–DC Converters

Resonant Push–Pull Converter With Flyback Regulator for MHz High Step-Up Power Conversion

Si ve GaN Yarı İletken tabanlı SEPIC DC-DC Led Sürücülerin Karşılaştırılması

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