Pavlovian conditioning achieved via one-transistor/one-resistor memristive synapse

Cheng, Yankun; Lin, Ya; Zeng, Tao; Shan, Xuanyu; Wang, Zhongqiang; Zhao, Xiaoning; Ielmini, Daniele; Xu, Haiyang; Liu, Yichun

doi:10.1063/5.0086867

Cited by 8 publications

(4 citation statements)

References 38 publications

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“…Based on these synaptic devices, such as memristors and transistors, several synaptic plasticity behaviors have been implemented successfully, including STP/LTP [ 24–26 ], synaptic learning rules [ 27–29 ]. Moreover, some advanced neuromorphic functions have also been realized, including pattern classification and recognition [ 30–33 ], perception [ 34–37 ], logic functions [ 38–40 ], conditional reflection [ 20 , 41 , 42 ], and so on. There are also several review articles on the recent progresses and application of neuromorphic devices [ 43–45 ].…”

Section: Introductionmentioning

confidence: 99%

Recent advances in neuromorphic transistors for artificial perception applications

Wang

Zhu

2022

Science and Technology of Advanced Materials

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Conventional von Neumann architecture is insufficient in establishing artificial intelligence (AI) in terms of energy efficiency, computing in memory and dynamic learning. Delightedly, rapid developments in neuromorphic computing provide a new paradigm to solve this dilemma. Furthermore, neuromorphic devices that can realize synaptic plasticity and neuromorphic function have extraordinary significance for neuromorphic system. A three-terminal neuromorphic transistor is one of the typical representatives. In addition, human body has five senses, including vision, touch, auditory sense, olfactory sense and gustatory sense, providing abundant information for brain. Inspired by the human perception system, developments in artificial perception system will give new vitality to intelligent robots. This review discusses the operation mechanism, function and application of neuromorphic transistors. The latest progresses in artificial perception systems based on neuromorphic transistors are provided. Finally, the opportunities and challenges of artificial perception systems are summarized.

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Section: Introductionmentioning

confidence: 99%

Recent advances in neuromorphic transistors for artificial perception applications

Wang

Zhu

2022

Science and Technology of Advanced Materials

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“…In this case, we used a voltage pulse with a pulse width of 500 ns to RESET the PCRAM in a low resistance state, and the continuously adjustable resistance value can be obtained as shown in Figure 10 a. With this change, maybe we can realize several basic synaptic functions at the cell level, including long-term plasticity (LTP) [ 41 , 42 ], short-term plasticity (STP) [ 41 , 42 ], spike timing-dependent plasticity (STDP) [ 43 , 44 ], and spike rate-dependent plasticity (SRDP) [ 44 , 45 ], and maybe can also realize more complex or higher-order learning behaviors at the network level, such as supervised learning [ 46 ] and associative learning [ 47 ], as well as non-von Neumann architecture of in-memory computing [ 48 , 49 ]. In general, for this phenomenon of continuous resistance change, the resistance drift caused by the widening of the band gap due to the structural relaxation (SR) of amorphous Sb 2 Te 3 is a great obstacle to multilevel storage, neuromorphic learning and in-memory computing.…”

Section: Resultsmentioning

confidence: 99%

The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb2Te3

Zhang

Rong

et al. 2023

Nanomaterials

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As a new generation of non-volatile memory, phase change random access memory (PCRAM) has the potential to fill the hierarchical gap between DRAM and NAND FLASH in computer storage. Sb2Te3, one of the candidate materials for high-speed PCRAM, has high crystallization speed and poor thermal stability. In this work, we investigated the effect of carbon doping on Sb2Te3. It was found that the FCC phase of C-doped Sb2Te3 appeared at 200 °C and began to transform into the HEX phase at 25 °C, which is different from the previous reports where no FCC phase was observed in C-Sb2Te3. Based on the experimental observation and first-principles density functional theory calculation, it is found that the formation energy of FCC-Sb2Te3 structure decreases gradually with the increase in C doping concentration. Moreover, doped C atoms tend to form C molecular clusters in sp2 hybridization at the grain boundary of Sb2Te3, which is similar to the layered structure of graphite. And after doping C atoms, the thermal stability of Sb2Te3 is improved. We have fabricated the PCRAM device cell array of a C-Sb2Te3 alloy, which has an operating speed of 5 ns, a high thermal stability (10-year data retention temperature 138.1 °C), a low device power consumption (0.57 pJ), a continuously adjustable resistance value, and a very low resistance drift coefficient.

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“…Pavlovian experiment introduced the concept of conditioned reflex, which connect the learning and memory. [54,55] In this work, pulsed V G with amplitude of 1 and 2 V were utilized to simulate the bell ring and the food, respectively. It was observed in Figure 3f that the EPSC caused by the pulsed V G of 1 V was within 1 μA while the EPSC caused by the pulsed V G of 2 V exceeded 1 μA.…”

Section: Synaptic Functions Realized By Single Array Unitmentioning

confidence: 99%

High‐Density Artificial Synapse Array Consisting of Homogeneous Electrolyte‐Gated Transistors

Li,

Lei,

Wang

et al. 2023

Advanced Science

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The artificial synapse array with an electrolyte‐gated transistor (EGT) as an array unit presents considerable potential for neuromorphic computation. However, the integration of EGTs faces the drawback of the conflict between the polymer electrolytes and photo‐lithography. This study presents a scheme based on a lateral‐gate structure to realize high‐density integration of EGTs and proposes the integration of 100 × 100 EGTs into a 2.5 × 2.5 cm2 glass, with a unit density of up to 1600 devices cm−2. Furthermore, an electrolyte framework is developed to enhance the array performance, with ionic conductivity of up to 2.87 × 10−3 S cm−1 owing to the porosity of zeolitic imidazolate frameworks‐67. The artificial synapse array realizes image processing functions, and exhibits high performance and homogeneity. The handwriting recognition accuracy of a representative device reaches 92.80%, with the standard deviation of all the devices being limited to 9.69%. The integrated array and its high performance demonstrate the feasibility of the scheme and provide a solid reference for the integration of EGTs.

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Pavlovian conditioning achieved via one-transistor/one-resistor memristive synapse

Cited by 8 publications

References 38 publications

Recent advances in neuromorphic transistors for artificial perception applications

Recent advances in neuromorphic transistors for artificial perception applications

The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb2Te3

High‐Density Artificial Synapse Array Consisting of Homogeneous Electrolyte‐Gated Transistors

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