1958
DOI: 10.1063/1.1723429
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Abstract: The dependence of the rate of the oxidation of silicon in oxygen-helium mixtures on gas composition at 1410°C is discussed theoretically. At low oxygen contents of the gas, no layer of solid silica is expected to occur and the rate of attack due to formation of volatile SiO is supposed to be proportional to the oxygen partial pressure in the bulk gas. Above a critical oxygen partial pressure, solid silica may be formed and the rate of attack under steady-state conditions may drop by several powers of ten.

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Cited by 306 publications
(140 citation statements)
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“…2) rather than the passive oxidation (Eq. 1) to occur, there has to be, according to Wagner [4], a significantly lower oxygen partial pressure at the gas-metal interface than in the bulk gas phase, which in the industrial case is ambient air. A complex boundary layer in the gas phase near the surface is described by Ratto et al [3].…”
Section: The Mechanismsmentioning
confidence: 99%
See 1 more Smart Citation
“…2) rather than the passive oxidation (Eq. 1) to occur, there has to be, according to Wagner [4], a significantly lower oxygen partial pressure at the gas-metal interface than in the bulk gas phase, which in the industrial case is ambient air. A complex boundary layer in the gas phase near the surface is described by Ratto et al [3].…”
Section: The Mechanismsmentioning
confidence: 99%
“…Wagner [4] studied the phenomenon theoretically in 1958, and presented a well-known theory for the oxidation reaction and its boundary conditions. In 1963, Turkdogan et al [5] published extensive experimental work on vaporization and oxidation of several liquid metals, and presented a general theory for oxidation of all metals.…”
mentioning
confidence: 99%
“…5, which were carried out at a higher temperature and higher H 2 O contents, it was observed after 30 minutes refining; i.e., the application of a higher steam concentration provided more favorable thermodynamic conditions for the formation of SiO 2 . [16] In Exp. 6 with 100 deg higher temperature compared to Exp.…”
Section: A Kinetics Of B Removalmentioning
confidence: 99%
“…SiO 2 has one of the lowest diffusion coefficients of O 2 (Jacobson, 1993), and as a result, this passive oxidation process is a slow process. At very high temperatures, formation of gaseous SiO becomes possible, and the oxidation process moves into a phase of active oxidation, where because of absence of a protective scale, the rate of the reaction is very high (Wagner, 1958;Pareek and Shores, 1992;Zheng et al, 1992;Sickafoose and Readey, 1993;Nickel et al, 1993). This pattern of oxidation is qualitatively the same for all Si-based materials, but the location of the passive to active oxidation transition boundary on the [oxygen partial pressure, temperature] plane varies with each material (Jacobson, 1993).…”
Section: Background Informationmentioning
confidence: 99%