volume 25, issue 6, P1393-1398 1989
DOI: 10.1109/3.29274
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Abstract: Absfract-Active-layer photomixing is a technique for modulating semiconductor lasers with nearly perfect immunity to device parasitics. We have previously demonstrated this technique at room temperature 121. In this paper, we measure the intrinsic modulation response of a laser diode using this technique at temperatures as low as 4.2 K. From these measurements, the temperature dependence of important dynamical parameters is determined. In addition, this provides a stringent test of the active-layer photomixin…

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