P
          -type polycrystalline diamond layers by rapid thermal diffusion of boron

Krutko, Oleh B.; Kosel, P. B.; Wu, Richard L. C.; Fries-Carr, S.; Heidger, S.; Weimer, J.A.

doi:10.1063/1.125605

Cited by 18 publications

(6 citation statements)

References 5 publications

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“…For example, Tsubouchi reports 1450 °C [40,42], and Wu employs annealing at 1700 °C [41]. Furthermore, these temperatures are also employed for indiffusion of boron [45].…”

Section: Electron Affinities and Ionization Energiesmentioning

confidence: 98%

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Theoretical models for doping diamond for semiconductor applications

Goss

Eyre

Briddon

2008

Physica Status Solidi (b)

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Diamond is a material with superlative properties in terms of carrier mobilities and device characteristics for high power electronics applications. Although p‐type diamond is routinely available using boron, n‐type material via impurity doping during the growth of diamond has historically been limited in success, partly because nitrogen is a hyper‐deep donor, but compounded by the compact lattice leading to low solubilities for alternative species. Implantation doping is often hampered by persistent residual damage leading to significant levels of compensation and the formation of dopant complexes with lattice vacancies. Experiment has been augmented by the application of quantum‐chemical methods to assess the likely properties should specific impurities or impurity complexes be realisable in real materials. The review outlines many of the doping strategies explored for diamond, including simple impurity doping and co‐doping. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…For example, Tsubouchi reports 1450 °C [40,42], and Wu employs annealing at 1700 °C [41]. Furthermore, these temperatures are also employed for indiffusion of boron [45].…”

Section: Electron Affinities and Ionization Energiesmentioning

confidence: 98%

“…In-diffusion of substitutional dopants has been achieved for boron, but the temperatures required are rather high: 1600 °C [45]. For in-diffusion of large donors such as P, it seems entirely likely that the temperatures required would be even higher.…”

Section: Impurity Band Conductionmentioning

confidence: 99%

Theoretical models for doping diamond for semiconductor applications

Goss

Eyre

Briddon

2008

Physica Status Solidi (b)

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“…24͒ and 1600°C. 25 The relatively high temperatures are required for migration of B s into the diamond ͑theoretically predicted 16 to be activated by 7.6 eV͒ but also will impact upon the equilibrium structure the boron will subsequently adopt. The former experiment estimated that a boron concentration of 3 ϫ 10 19 cm −3 had been obtained.…”

Section: Resultsmentioning

confidence: 98%

“…23 Moreover, B doping can be achieved by indiffusion at high temperature. 24,25 Since this yields p-type diamond under indiffusion conditions where B s is mobile, B appears to adopt the B s form rather than B 2 , which is in stark contrast to the efficient A-center formation in N-doped material when N s becomes mobile.…”

Section: A Impurity Pairs In Diamondmentioning

confidence: 93%

Model thermodynamics and the role of free-carrier energy at high temperatures: Nitrogen and boron pairing in diamond

MacLeod¹,

Murray²,

Goss³

et al. 2009

Phys. Rev. B

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The role of configurational, vibrational, and electrical terms in the temperature-dependent binding energy of impurity pairs at high temperatures is considered by use of the example of boron and nitrogen in diamond. To calculate the free binding energy, we have developed a formalism for quantification of the free carrier contribution to the free binding energy. For doping concentrations of 10 18 cm −3 , N 2 is favored over isolated substitutional N for temperatures up to ϳ2600 K, and boron favors the isolated substitutional form above ϳ750 K. Comparing with typical experimental conditions for growth or heat treatment, we show that the calculations account for the different behavior observed for B and N. For boron, the electronic contribution is large at low concentrations at the temperature at which B s is able to migrate and cannot be neglected.

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“…1 The boron can be introduced into the diamond ͑i͒ during growth, 2 ͑ii͒ by ion implantation, 3 or ͑iii͒ by thermal diffusion. 4 Substitutional nitrogen constitutes donor levels in diamond. However, their energy of 1.7 eV below the conduction-band minimum 5 is too deep in order to supply a sufficient number of electrons to the conduction band.…”

Section: Introductionmentioning

confidence: 99%

n -type conductivity in high-fluence Si-implanted diamond

Weishart

Heera

Skorupa

2005

Journal of Applied Physics

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Epitaxial SiC nanocrystals are fabricated by high-fluence Si implantation into natural diamond at elevated temperatures between 760 and 1100 °C. Fluences under investigation range from 4.5 to 6.2×1017Sicm−2. This implantation scheme yields a buried layer rich of epitaxially aligned SiC nanocrystals within slightly damaged diamond. The generation of a small fraction of graphitic sp2 bonds of up to 15% in the diamond host matrix cannot be avoided. Unintentional coimplantation with nitrogen results in a very high doping level of more than 1021cm−3. Resistivity and Hall measurements in van der Pauw geometry reveal a high, thermally stable n-type conductivity with electron concentrations exceeding 1020cm−3 and mobilities higher than 2cm2∕Vs. It is supposed that both the SiC regions as well as the diamond matrix exhibit n-type conductivity and that the electron transport occurs across the low-resistivity SiC nanograins. In the SiC nanocrystals the electrons originate from nitrogen donors whereas in diamond defects are responsible for the electron conductivity. The formation of disordered graphite, which leads to low electron mobility, is substantially reduced by the SiC formation.

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P -type polycrystalline diamond layers by rapid thermal diffusion of boron

Cited by 18 publications

References 5 publications

Theoretical models for doping diamond for semiconductor applications

Theoretical models for doping diamond for semiconductor applications

Model thermodynamics and the role of free-carrier energy at high temperatures: Nitrogen and boron pairing in diamond

n -type conductivity in high-fluence Si-implanted diamond

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