volume 134, issue 2-3, P176-184 2006
DOI: 10.1016/j.mseb.2006.06.045
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Abstract: Dislocation locking has been investigated in Czochralski silicon with different oxygen concentrations in the 350-850 • C temperature range. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which oxygen diffuses to the dislocations. The stress required to bring about dislocation motion is then measured at 550 • C. The dislocation unlocking stress as a function of annealing time is found to obey distinct regimes. For all anneal…

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