Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si

Atanassova, E.; Novkovski, N.; Paskaleva, A.; Pecovska-Gjorgjevich, M.

doi:10.1016/s0038-1101(02)00134-x

Cited by 60 publications

(38 citation statements)

References 19 publications

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“…Hence, the refractive index n = ε 0.5 = 1.95, as suggested in Ref. [33]. It is interesting to mention here that we have found the optical energy gap for oxide film of sample S300 to be 3.2 eV, and by using the suggested empirical formula E g exp(n) = 25 [34] one can find n = 2.05, which is near the above mentioned value to within ±0.1.…”

Section: Resultssupporting

confidence: 81%

DC electronic transport mechanisms in some manganese-oxide insulator thin films grown on Si substrates

Dakhel¹

2006

Journal of Alloys and Compounds

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Section: Resultssupporting

confidence: 81%

DC electronic transport mechanisms in some manganese-oxide insulator thin films grown on Si substrates

Dakhel¹

2006

Journal of Alloys and Compounds

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“…2 In consequence, a number of compatible methods such as rf sputtering, thermal oxidation of Ta film, a variety of chemical-vapor deposition techniques, ionbeam deposition, atomic layer deposition, pulsed laser deposition have been developed to fabricate Ta 2 O 5 films. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] Investigations on the production methodology continue in competition with alternative solution and each method exhibits advantages and disadvantages in terms of, mainly, electrical properties that are essential for DRAM applications. It is not yet clear which method will be chosen as the best one with respect to the storage capacitor applications because each fabricated method strongly affects the structural and electrical properties of the Ta 2 O 5 .…”

Section: Introductionmentioning

confidence: 99%

Structural and optical characteristics of tantalum oxide grown by pulsed Nd:YAG laser oxidation

Atanassova

Aygün

Turan

et al. 2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films J. Appl. Phys. 112, 103306 (2012) Tantalum pentoxide ͑Ta 2 O 5 ͒ thin films ͑20-50 nm͒ have been grown by 1064 nm Nd:YAG laser oxidation of Ta film deposited on Si. The chemical bonding, structure, and optical properties of the films have been studied by Fourier transform infrared spectroscopy, x-ray diffraction, and reflectance measurements at normal light incidence in the spectral range of 350-800 nm. The effect of the substrate temperature ͑250-400°C͒ during oxidation and its optimization with respect to the used laser beam energy density ͑3.2-3.4 J / cm 2 per pulse͒ is discussed. It is established that the substrate temperature is a critical factor for the effectiveness of the oxidation process and can be used to control the composition and amorphous status of the films. The film density explored by refractive index is improved with increasing film thickness. The refractive index of the layers grown under the higher laser beam energy density and at substrate temperature of 350-400°C was found to be close to the value of bulk Ta 2 O 5 . The films are amorphous at substrate temperature below 350°C and possessed an orthorhombic ͑␤-Ta 2 O 5 ͒ crystal structure at higher temperatures. The thinner layers crystallize at a little higher temperature.

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“…Several mechanisms may govern the conduction of the leakage current in the Cu/TaN/Ta-gated MIS capacitor, including Schottky emission, the PooleFrenkel effect, electronic hopping conduction and tunneling. 15,[20][21][22] Schottky emission is modeled as 22…”

Section: Resultsmentioning

confidence: 99%

Influence of bias-temperature stressing on the electrical characteristics of SiOC:H film with Cu/TaN/Ta-gated capacitor

Tsai

Chao

2006

Journal of Elec Materi

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Experiments on bias-temperature stressing, capacitance-voltage measurements, current-voltage characteristics, and time-dependent dielectric breakdown were performed to evaluate the reliability of Cu and low-k SiOC:H integration. A high leakage current of ;8 3 10 ÿ10 to 2 3 10 ÿ8 A/cm 2 at 1 MV/cm in SiOC:H dielectrics in a Cu-gated capacitor, and a lower 2 3 10 ÿ10 to 5 3 10 ÿ10 A/cm 2 at 1 MV/cm in a Cu/TaN/Ta-gated capacitor, were observed at evaluated temperatures. The drift mobility of the Cu 1 ions in the Cu/TaN/Tagated capacitor was lower than that in a Cu-gated capacitor. A physical model was developed to explain the observed kinetics of Cu 1 ions that drift in Cugated and Cu/TaN/Ta-gated capacitors. The electric field in the Cu-gated MIS capacitor in the cathode region is believed to be increased by the accumulation of positive Cu 1 ions, which determines the breakdown acceleration. Good Cu 1 ions drift barrier layers are required as reliable interconnects using thin TaN and Ta layers. Additionally, Schottky emission dominates at low electric fields, E , 1.25 MV/cm, and Poole-Frenkel emission dominates at high fields, E . 1.5 MV/cm.

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Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si

Cited by 60 publications

References 19 publications

DC electronic transport mechanisms in some manganese-oxide insulator thin films grown on Si substrates

DC electronic transport mechanisms in some manganese-oxide insulator thin films grown on Si substrates

Structural and optical characteristics of tantalum oxide grown by pulsed Nd:YAG laser oxidation

Influence of bias-temperature stressing on the electrical characteristics of SiOC:H film with Cu/TaN/Ta-gated capacitor

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