Oxide dual-layer memory element for scalable non-volatile cross-point memory technology

Meyer, René; Schloss, L.; Brewer, Joleyn; Lambertson, R.; Kinney, W.I.; Sanchez, J.; Rinerson, D.

doi:10.1109/nvmt.2008.4731194

Cited by 93 publications

(71 citation statements)

References 7 publications

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“…The suggested time dependency and number of resistance states in non-filamentary resistive switches are quite different from those in filamentary devices 5,7,24,25 . However, there are only very few well-known bulk memristive systems [25][26][27][28] , since the bulk ionic conductivity of MIECs is usually very low near room temperature. Furthermore, the direct evidence for the bulk state function of the switching system is still missing.…”

mentioning

confidence: 99%

Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour

et al. 2014

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In thin films of mixed ionic electronic conductors sandwiched by two ion-blocking electrodes, the homogeneous migration of ions and their polarization will modify the electronic carrier distribution across the conductor, thereby enabling homogeneous resistive switching. Here we report non-filamentary memristive switching based on the bulk oxide ion conductivity of amorphous GaO x (xB1.1) thin films. We directly observe reversible enrichment and depletion of oxygen ions at the blocking electrodes responding to the bias polarity by using photoemission and transmission electron microscopies, thus proving that oxygen ion mobility at room temperature causes memristive behaviour. The shape of the hysteresis I-V curves is tunable by the bias history, ranging from narrow counter figure-eight loops to wide hysteresis, triangle loops as found in the mathematically derived memristor model. This dynamical behaviour can be attributed to the coupled ion drift and diffusion motion and the oxygen concentration profile acting as a state function of the memristor.

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confidence: 99%

Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour

et al. 2014

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“…Additionally, due to the presence of the LAO layer, the LAO/ STO interface resembles greatly an oxide dual-layer memory element. 15 The movement of oxygen ion under negative/ positive voltage pulses will also lead to depletion/ accumulation of negatively charged oxygen ions in the LAO film, which acts as a tunneling barrier layer. This will result in a reduction/enhancement of the effective height of the tunnel barrier, thus a contribution to the low/high resistance switching behavior.…”

mentioning

confidence: 99%

“…Therefore, the resistance switching at the interface of LAO/STO should be a consequence of the combination effects of both field-induced oxygen vacancies redistribution and field-modulated tunnel barrier height change. However, since the change in the tunnel barrier height will result in a smooth resistance variation, 15 the observed abrupt resistance change strongly suggests that the oxygen vacancies redistribution in STO plays a dominant role in determining the resistance switching at the interface of LAO/STO. This is also consistent with the fact that a nearly symmetric I-V curve is observed when the interface is switched to a low resistance state as shown in Figs.…”

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confidence: 99%

Resistance switching at the interface of LaAlO3/SrTiO3

Chen

Zhao

Sun

et al. 2010

Applied Physics Letters

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At the interface of LaAlO3/SrTiO3 with film thickness of 3 unit cells or greater, a reproducible electric-field-induced bipolar resistance switching of the interfacial conduction is observed on nanometer scale by a biased conducting atomic force microscopy under vacuum environment. The switching behavior is suggested to be an intrinsic feature of the SrTiO3 single crystal substrates, which mainly originates from the modulation of oxygen ion transfer in SrTiO3 surface by external electric field in the vicinity of interface, whereas the LaAlO3 film acts as a barrier layer.

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“…Generally, homogeneous RS devices show a clear scaling of the change of resistance with the electrode area. Interface-layer-type RS systems usually shows the homogeneous RS, as reported by Meyer et al, [59] Hasan et al, [60] and Sawa et al [25,61] When the interface-layer-type RS shows some inhomogeneous RS behavior, this resembles the conductive channel behavior in the oxide bulk, which will be discuss later in Schottky junctions. [62] The resistance values in On and Off states depend linearly on the electrode area, suggesting that the RS takes place over the entire area of the interface.…”

Section: Is Interface Rs Homogeneous or Inhomogeneous?mentioning

confidence: 70%

Resistance switching in oxides with inhomogeneous conductivity

Shang¹,

Sun²,

Shen³

et al. 2013

Chinese Phys. B

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Electric-field-induced resistance switching (RS) phenomena have been studied for over 60 years in metal/dielectrics/metal structures. In these experiments a wide range of dielectrics have been studied including binary transition metal oxides, perovskite oxides, chalcogenides, carbon-and silicon-based materials, as well as organic materials. RS phenomena can be used to store information and offer an attractive performance, which encompasses fast switching speeds, high scalability, and the desirable compatibility with Sibased complementary-metal-oxide-semiconductor fabrication. This is promising for nonvolatile memory technology, i.e. resistance random access memory (RRAM). However, a comprehensive understanding of the underlying mechanism is still lacking. This impedes a faster product development as well as an accurate assessment of the device performance potential. Generally speaking, RS occurs not in the entire dielectric but only a small, confined region, which results from the local variation of conductivity in dielectrics. In this review, we focus on the RS in oxides with such an inhomogeneous conductivity. According to the origin of the conductivity inhomogeneity, the RS phenomena and their working mechanism are reviewed by dividing them into two aspects: interface RS, based on the change of contact resistance at metal/oxide interface due to the change of Schottky barrier and interface chemical layer, and bulk RS, realized by the formation, connection, and disconnection of conductive channels in the oxides. Finally the current challenges of RS investigation and the potential improvement of the RS performance for the nonvolatile memories are discussed.

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Oxide dual-layer memory element for scalable non-volatile cross-point memory technology

Cited by 93 publications

References 7 publications

Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour

Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour

Resistance switching at the interface of LaAlO3/SrTiO3

Resistance switching in oxides with inhomogeneous conductivity

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