Oxide Double‐Layer Nanocrossbar for Ultrahigh‐Density Bipolar Resistive Memory

Abstract

A TiO2/VO2 oxide double‐layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO2 and VO2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.

Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films

“…In particular, control over the switching voltages, where abrupt current changes occur by application of electric fields, is crucially important for stable performance of VO 2 devices. 3,4 Despite such importance, intentional control over the switching voltages has not been quantitatively investigated to date. We address a key question in this work: can the switching voltages be varied by changing the external parameters, and if they can, what is the origin of the variation?…”

Epitaxial growth and metal-insulator transition of vanadium oxide thin films with controllable phases

“…[1][2][3] Normally, vanadium can exhibit various oxidation states of V 2þ , V 3þ , V 4þ , or V 5þ to form the vanadium oxides of VO, V 2 O 3 , VO 2 , or V 2 O 5 . Among them, V 2 O 3 undergoes a metal-insulator transition (MIT) at 155 K, changing from a paramagnetic metal to an antiferromagnetic insulator, whereas the crystal structure has a transition from rhombohedra to monoclinic.…”

Memristive Switching in Bi1–xSbx Nanowires

“…1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 V. This behavior was similar to the RS reported for the CRS devices. [7][8][9] In fact, we fabricated more than 10 devices at 0.1 ≤ x ≤ 0.15. Among them, five devices exhibited CRS-like behavior with resistance ratio R HRS /R LRS ≈ 10 3 (Supporting Fig.…”

“…In addition, some Bi 1-x Sb x nanowires at 0.1 ≤ x ≤ 0.15 show complementary RS (CRS) -like behavior observed in CRS devices consisting of two bipolar memory cells that are antiserially connected. [7][8][9] Electric field-induced RS phenomena have usually been studied in oxides (including NiO x , TiO x , SiO x , and VO x ), perovskite oxides (including SrTiO 3 , and BiFeO 3 ), and chalcogenides (including AgS 2 and CuS 2 ). [10][11][12][13] These materials are initially in an insulating state, and a forming process is a prerequisite to change them to a bistable reversible state.…”