Oxidation resistance of impurity doped Mg<sub>2</sub>Si grown from the melt

Konno, Shu; Tsubasa, Otubo; Nakano, K.; Udono, Haruhiko

doi:10.7567/jjapcp.5.011301

Proc. Asia-Pacific Conf. On Semiconducting Silicides and Related Materials 2016 2017

DOI: 10.7567/jjapcp.5.011301

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Oxidation resistance of impurity doped Mg₂Si grown from the melt

Shu Konno¹,

Otubo Tsubasa²,

K. Nakano³

et al.

Abstract: We have investigated oxidation resistance of melt grown Mg2Si crystals doped with Sb or Bi impurity by thermal annealing above 600°C, large difference of oxidation speed was observed in the Sb-doped, Bi-doped and non-doped Mg2Si crystals. The sample weight of Bi-doped and non-doped Mg2Si increased about 128% and 104%, respectively, while that of Sb-doped one unchanged after thermal annealing at 650°C for 6h. TG/DTA analysis also revealed the changing of oxidation speed and reaction temperature in the Sb-doped,… Show more

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2022

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Silicon meets group-II metals in energy and electronic applications—How to handle reactive sources for high-quality films and bulk crystals

Suemasu

Hara

Udono

et al. 2022

Journal of Applied Physics

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In the present advanced information society, the group IV element Si is inevitably used for various high-performance devices, such as transistors and solar cells. When Si meets group-II elements such as Mg, Ca, Sr, or Ba, semiconducting silicides are formed, which are applicable to energy conversion devices such as thin-film solar cells and thermoelectric devices. In this Tutorial, we focus on two representative typical semiconducting silicides among them: Mg2Si and BaSi2 composed of earth-abundant elements. Mg2Si has been extensively studied for light-weight high-performance thermoelectric devices, whereas BaSi2 has been studied for thin-film solar cells, and recently has also been attracting attention as a thermoelectric material. However, these group-II elements are highly reactive with oxygen and water. Thus, we need to be careful when handling these elements. In this Tutorial, we provide guidance on how to handle these group-II elements and their compounds in an easy-to-understand manner for beginners. In addition, we introduce thin-film growth and bulk growth techniques, as well as the points to be considered when characterizing these materials.

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Silicon meets group-II metals in energy and electronic applications—How to handle reactive sources for high-quality films and bulk crystals

Suemasu

Hara

Udono

et al. 2022

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

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Oxidation resistance of impurity doped Mg₂Si grown from the melt

Cited by 1 publication

References 14 publications

Silicon meets group-II metals in energy and electronic applications—How to handle reactive sources for high-quality films and bulk crystals

Silicon meets group-II metals in energy and electronic applications—How to handle reactive sources for high-quality films and bulk crystals

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Oxidation resistance of impurity doped Mg2Si grown from the melt

Cited by 1 publication

References 14 publications

Silicon meets group-II metals in energy and electronic applications—How to handle reactive sources for high-quality films and bulk crystals

Silicon meets group-II metals in energy and electronic applications—How to handle reactive sources for high-quality films and bulk crystals

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Oxidation resistance of impurity doped Mg₂Si grown from the melt