2015
DOI: 10.1002/ente.201500229
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Overcoming the Problem of Electrical Contact to Solar Cells Fabricated using Selective‐Area Silicon Nanopillars by Cesium Chloride Self‐Assembly Lithography as Antireflective Layer

Abstract: Selective‐area nanopillar‐textured solar cells were fabricated by using a convenient method to overcome the problem of metal contacts on the nanopillars surfaces. A Ti/Ag electrode layer was deposited onto the planar surface after phosphorous doping, and then the nanopillars were fabricated on the surface by using cesium chloride (CsCl) self‐assembly lithography. With this method, nanopillars of approximately 150 nm average diameter and heights from 120 to 480 nm [corresponding inductively coupled plasma (ICP)… Show more

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Cited by 2 publications
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“…13,[24][25][26] In addition, silicon nanocone and nanopillar arrays in the silicon wafers have been generated by using ICP etching and extreme ultraviolet lithography. 10,[27][28][29] As one widely-used method for semiconductor processing, the ICP etching method has been applied, with several advantages, including low damage, high etching rates, high anisotropy, and high selection ratio. 30 The ICP method is a very complex physical and chemistry process, which is composed of two components: one is the interaction between the free radicals, metastable particles, and atoms by the inductively coupled grow discharge of etching gas; the other is the interaction between the active particles and the surface of a sample.…”
Section: Introductionmentioning
confidence: 99%
“…13,[24][25][26] In addition, silicon nanocone and nanopillar arrays in the silicon wafers have been generated by using ICP etching and extreme ultraviolet lithography. 10,[27][28][29] As one widely-used method for semiconductor processing, the ICP etching method has been applied, with several advantages, including low damage, high etching rates, high anisotropy, and high selection ratio. 30 The ICP method is a very complex physical and chemistry process, which is composed of two components: one is the interaction between the free radicals, metastable particles, and atoms by the inductively coupled grow discharge of etching gas; the other is the interaction between the active particles and the surface of a sample.…”
Section: Introductionmentioning
confidence: 99%