Outdoor performance of triple stacked a-Si photovoltaic module in various geographical locations and climates

Fukae, K.; Lim, C.C.; Tamechika, M.; Takehara, Nagito; Saito, Kimiko; Kajita, Isamu; Kondo, Eiki

doi:10.1109/pvsc.1996.564353

Cited by 9 publications

(5 citation statements)

References 6 publications

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“…Fukae et al . reported on the performance of triple junction a‐Si modules and crystalline Si control modules at three different locations in Japan and Malaysia . Although the observation time was only around 1 year, Fukae et al .…”

Section: Historical Overviewmentioning

confidence: 99%

Photovoltaic Degradation Rates—an Analytical Review

Jordan

Kurtz

2011

Progress in Photovoltaics

1,100

552

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As photovoltaic penetration of the power grid increases, accurate predictions of return on investment require accurate prediction of decreased power output over time. Degradation rates must be known in order to predict power delivery. This article reviews degradation rates of flatplate terrestrial modules and systems reported in published literature from field testing throughout the last 40 years. Nearly 2000 degradation rates, measured on individual modules or entire systems, have been assembled from the literature, showing a median value of 0.5%/year. The review consists of three parts: a brief historical outline, an analytical summary of degradation rates, and a detailed bibliography partitioned by technology.

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Section: Historical Overviewmentioning

confidence: 99%

Photovoltaic Degradation Rates—an Analytical Review

Jordan

Kurtz

2011

Progress in Photovoltaics

1,100

552

View full text Add to dashboard Cite

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“…However, of c-Si and poly-Si solar cells seriously decreases with an increase in the operating temperature, while hydrogenated amorphous Si (a-Si:H)-based thin-film solar cells exhibit relatively small variation in . [4][5][6][7] The main reason for the lower temperature coefficient (TC) of a-Si:H-based solar cells is their wide-band-gap intrinsic absorber or high V oc compared with those of bulk crystalline Si-solar cells. Taking the real output power affected by the operating temperature and production cost into account, a-Si:H-based thin-film solar cells have advantages over bulk crystalline-Si solar cells for use in high temperature areas such as a tropical region.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Si-Based Thin-Film Solar Cells Fabricated on Amorphous to Microcrystalline Silicon Transition Phase

Sriprapha

Yunaz

Myong

et al. 2007

jjap

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The temperature dependence of silicon (Si)-based thin-film single-junction solar cells, whose intrinsic absorbers were fabricated on the transition phase between hydrogenated amorphous silicon (a-Si:H) to hydrogenated microcrystalline silicon (mc-Si:H), was investigated. By varying the hydrogen dilution ratio, wide-band-gap protocrystalline silicon (pc-Si:H) and mc-Si:H absorber layers were obtained. Photo-current density-voltage (Photo-J-V) characteristics were measured under AM1.5 illumination at ambient temperatures in the range of 25 -75 C. We found that the solar cells with pc-Si:H, which exists just below the a-Si:H to mc-Si:H transition boundary, showed the lowest temperature coefficient (TC) for conversion efficiency () and open-circuit voltage (V oc ), while the solar cells fabricated at the onset of the a-Si:H to mc-Si:H phase transition exhibited a relatively high TC for and V oc . Experimental results indicated that pc-Si:H is a promising material for the absorber layer of the single junction or the top cell of tandem solar cells that operate in high temperature regions.

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“…Among Si-based solar cells, bulk crystalline Si solar cells including single crystalline-Si (c-Si) and polycrystalline-Si (poly-Si) solar cells show higher η than thin film solar cells at STC. However, η of c-Si and poly-Si solar cells seriously decreases with an increase in the operating temperature, while hydrogenated amorphous Si (a-Si:H)-based thin film solar cells reveal relatively small variation in η [4][5][6][7]. The main reason for the lower TC for a-Si:H-based solar cells is due to their wide band gap intrinsic absorber or high V oc compared with bulk crystalline Si-solar cells.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of Si-based thin film solar cells near phase boundary

et al. 2007

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The temperature dependence of silicon (Si)-based thin film single junction solar cells whose intrinsic absorbers were fabricated near the phase boundary of hydrogenated amorphous silicon (a-Si:H) to hydrogenated microcrystalline silicon (µc-Si:H) was investigated. By varying the hydrogen dilution ratio, wide bandgap protocrytalline silicon (pc-Si:H) and the mixed-phase of a-Si:H and µc-Si:H absorber layers were obtained. Photo J-V characteristics were measured under AM1.5 illumination at ambient temperature in the range of 25-75 o C. We found that the pc-Si:H solar cells which exist below the a-Si:H and µc-Si:H transition boundary exhibited the lowest temperature coefficient (TC) for conversion efficiency (η) and open-circuit voltage (V oc ), while the solar cells fabricated at the mixed-phase of a-Si:H and µc-Si:H revealed a relatively high TC for η and V oc . Experimental results indicated that pc-Si:H which fabricated at the silane concentration (SC), SC = [SiH 4 ]/([SiH 4 ]+[H 2 ]), of 5.75% showed the highest initial η, low TC for η and degradation ratio. This material at this condition is a promising for using as an absorber layer of single junction or top cell for tandem solar cells which operating in high temperature regions.

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Outdoor performance of triple stacked a-Si photovoltaic module in various geographical locations and climates

Cited by 9 publications

References 6 publications

Photovoltaic Degradation Rates—an Analytical Review

Photovoltaic Degradation Rates—an Analytical Review

Temperature Dependence of Si-Based Thin-Film Solar Cells Fabricated on Amorphous to Microcrystalline Silicon Transition Phase

Temperature dependence of Si-based thin film solar cells near phase boundary

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