volume 15, issue 8, P1170-1175 1985
DOI: 10.1070/qe1985v015n08abeh007634
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Abstract: Erosion and changes in the sidewall smoothness d masking layers commonty used as dry etch masks for iil-V semiconductors have been studied for U?-, F2-and CHa/HZ-based discharges. A panicular problem with photoresist masks is the introduction of sidewall roughness which i s transferred into the underlying dielectric or semiconductor. Distortion of the resist mask also occurs during high DC bias dry etching, leading to feature widths wider than the original mask dimension. Both d these phenomena are minimized …

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