Origin of efficiency droop in GaN-based light-emitting diodes

Kim, Minho; Schubert, M.; Dai, Qi; Kim, Jong Kyu; Schubert, E. Fred; Piprek, Joachim; Park, Yongjo

doi:10.1063/1.2800290

Cited by 1,257 publications

(821 citation statements)

References 11 publications

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“…1) Although the origin of the efficiency droop is still the subject of controversy, [1][2][3][4] many studies suggest that it could originate from efficient Auger recombination of charge carriers confined in the quantum well (QW) plane. 2) One natural way to decrease the efficiency of Auger recombination is to decrease the charge carrier density in the QW, which can be achieved by increasing the thickness of the QW.…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Corfdir

Teisseyre

Suski

et al. 2013

Jpn. J. Appl. Phys.

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This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature range. At higher temperatures, the escape of charge carriers from the quantum well to the (Al,Ga)N barriers is accompanied by a reduction in internal quantum efficiency. Based on the temperature-dependence of time-resolved photoluminescence experiments, we also show how the local disorder affects the exciton radiative lifetime at low temperature and the exciton non-radiative lifetime at high temperature.

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Section: Introductionmentioning

confidence: 99%

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Corfdir

Teisseyre

Suski

et al. 2013

Jpn. J. Appl. Phys.

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“…In addition, it allows to explore (001) oriented cubic SiC surfaces as needed for further heteroepitaxial growth of other cubic semiconductors. For example, the growth of cubic gallium nitride would be very beneficial to explore the more efficient white light emitting diodes due to less influence of the droop effect [9,10].…”

Section: Introductionmentioning

confidence: 99%

Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds

et al. 2012

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Abstract:Cubic silicon carbide is a promising material for medium power electronics operating at high frequencies and for the subsequent growth of gallium nitride for more efficient light emitting diodes. We present a new approach to produce freestanding cubic silicon carbide (3C-SiC) with the ability to obtain good crystalline quality regarding increased domain size and reduced defect density. This would pave the way to achieve substrates of 3C-SiC so that the applications of cubic silicon carbide material having selectively (111) or (001) oriented surfaces can be explored. Our method is based on the combination of the chemical vapor deposition method and the fast sublimation growth process. Thin layers of cubic silicon carbide grown heteroepitaxially on silicon substrates are for the first time used for a subsequent sublimation growth step to increase layer thicknesses. We have been able to realize growth of freestanding (001) oriented 3C-SiC substrates using growth rates around 120 µm/h and diameters of more than ten millimeters. The structural quality from XRD rocking curve measurements of (001) oriented layers shows good FWHM values down to 78 arcsec measured over an area of 1x2 mm 2 , which is a quality improvement of 2-3 times compared with other methods like CVD.

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“…One source of efficiency loss in InGaN/GaN QW structures and LEDs is the thermal escape of carriers from the QW confining potential before they recombine [21,22]. The RT IQE of InGaN/GaN MQW structures, and LEDs, without prelayers has been measured to increase with increasing number of QWs, an effect which has been attributed to the recapture of carriers by adjacent QWs [23,24].…”

Section: Resultsmentioning

confidence: 91%

Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

Christian

Hammersley

Davies

et al. 2016

Phys. Status Solidi C

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We report on the effects of varying the number of quantum wells (QWs) in an InGaN/GaN multiple QW (MQW) structure containing a 23 nm thick In0.05Ga0.95N prelayer doped with Si. The calculated conduction and valence bands for the structures show an increasing total electric field across the QWs with increasing number of QWs. This is due to the reduced strength of the surface polarisation field, which opposes the built‐in field across the QWs, as its range is increased over thicker samples. Low temperature photoluminescence (PL) measurements show a red shifted QW emission peak energy, which is attributed to the enhanced quantum confined Stark effect with increasing total field strength across the QWs. Low temperature PL time decay measurements and room temperature internal quantum efficiency (IQE) measurements show decreasing radiative recombination rates and decreasing IQE, respectively, with increasing number of QWs. These are attributed to the increased spatial separation of the electron and hole wavefunctions, consistent with the calculated band profiles. It is also shown that, for samples with fewer QWs, the reduction of the total field across the QWs makes the radiative recombination rate sufficiently fast that it is competitive with the efficiency losses associated with the thermal escape of carriers. (© 2016 The Authors. Phys. Status Solidi C published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Origin of efficiency droop in GaN-based light-emitting diodes

Cited by 1,257 publications

References 11 publications

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds

Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

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