2019
DOI: 10.1021/acsaelm.9b00596
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Origin of Band Modulation in GeTe-Rich Ge–Sb–Te Thin Film

Abstract: Germanium tellurides and their pseudobinary compounds offer interesting properties that are important in thermoelectric and phase-change applications. Despite being a class of materials under scrutiny since its discovery, unique properties and functionalities have kept on emerging in recent years. In this work, we observed another unique property of Ge−Sb−Te (GST) thin film that can be beneficial in its development for thermoelectric applications. A rapid heating and quenching process of the GST film resulted … Show more

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Cited by 4 publications
(2 citation statements)
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“…Cationic elements, such as group IVA (Sn and Pb), group IIIA (In and Ga), and transition metals are used to construct these GST alloy [47]. The physicochemical properties of Ge-Sb-Te (GST) can be utilized for sensing, as well as in thermoelectric, nonvolatile RAM and face change properties [48,49]. This can help to improve the bandgap energy of GST.…”
Section: Ge-sb-te Superlatticementioning
confidence: 99%
“…Cationic elements, such as group IVA (Sn and Pb), group IIIA (In and Ga), and transition metals are used to construct these GST alloy [47]. The physicochemical properties of Ge-Sb-Te (GST) can be utilized for sensing, as well as in thermoelectric, nonvolatile RAM and face change properties [48,49]. This can help to improve the bandgap energy of GST.…”
Section: Ge-sb-te Superlatticementioning
confidence: 99%
“…The physico-chemical characteristics are helpful for sensing, in nonvolatile RAM, thermoelectric properties and face changing features to increase the bandgap energy of Ge-Sb-Te (GST) [19,20]. Phase Change Material (P CM ) properties of Ge − Sb − T e (GST ) complex with a group of chalcogenides are promising technology and well known for many years [21,22].…”
Section: Introductionmentioning
confidence: 99%