Orientation effects in chemical solution derived Pb(Zr0.3,Ti0.7)O3 thin films on ferroelectric properties

Annealing effect of platinum-based electrodes on physical properties of PZT thin films

“…In Fig. 5a-c, the PZT/Pt(1 1 1)/Ti film shows highly rectangular P-V hysteresis loops with low saturation voltage and a high P r value, while the PZT/Pt(poly)/TiO 2 film shows deteriorated hysteresis loops with a low P r value [11]. The slim hysteresis might be caused by degradation of the surface morphology and the diversity in grain size due to thermal treatment [12].…”

Growth and electrical properties of Pb(Zr,Ti)O3 thin films by a chemical solution deposition method using zirconyl heptanoate as zirconium source

“…It should be noted that (1 0 0) oriented PZT has the lowest surface energy, thus, the growth plane of PZT with the lowest activation energy is the (1 0 0) plane. Therefore, (1 0 0) nuclei of PZT will grow more rapidly compared with other oriented nuclei, and the film will have either a (1 0 0) preferential orientation or random orientation [19].…”

Stress state analysis of stress engineered BaTiO₃ thin film by LaNiO₃ bottom electrode

“…From the result, we considered that the high ferroelectric properties resulted from the compressive stress applied in plane by the LNO bottom electrode. It is significant to understand more precisely the stress state of the BTO film and LNO electrodes using TEM since the properties of the ferroelectric thin films are generally affected by many nano-scale factors such as micro-structure, 19) orientation, 20) particle size, 21) effect of electrode, 22) remnant stress 17) etc. In the present study, the BTO film was precisely investigated by cross sectional TEM observation and the stress distribution in the BTO and LNO films was estimated from lattice parameters at each area of the films.…”