Organic light-emitting diodes with n-type silicon anode

Ran, Guangzhao; Xu, Ying; L, G; Xu, Aiqun; Qiao, Yijuan; Chen, W X; Qin, G. G.

doi:10.1088/0268-1242/20/8/019

Cited by 9 publications

(6 citation statements)

References 27 publications

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“…The reports generally concluded that the performance of OLEDs with metal anodes is poorer than those OLEDs with ITO anodes. However, the metals of Au and Pt with proper surface treatment on non-ITO electrodes, such as Si and Al, have been reported to improve the performance of top emission OLEDs [19], [20] but no obvious studies on ITO electrodes for bottom emission OLEDs.…”

mentioning

confidence: 99%

Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices

Zhang

Choy²

2008

IEEE Trans. Electron Devices

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CONVENTIONAL bottom emitting organic light-emitting devices (OLEDs) commonly use conductive indium tin oxide (ITO) as anode because of its high conductivity, transparency, and work function. However, the surface of ITO glass is chemically and physically ill defined, which will degrade the performance as the hole-injecting electrode in OLEDs. Over the past years, many methods were used to treat the surface of ITO [1]- [5], such as ultraviolet-ozone cleaning and oxygen plasma exposure, in order to enhance hole injection [1], [2]. These treatments were effective in removing residual surface contaminants and increasing oxygen content at ITO surface, resulting in the increase of work function to minimize interfacial charge injection barriers.Moreover, the incorporation of injection enhancing interlayer at electrode-organic interfaces has been used as one alternative route to control carrier injection [6] In this brief, we use V 2 O 5 coating on transparent thin Au film as a composite hole-injection layer on ITO anode for bottom emitting OLEDs. The characteristics of bottom emitting OLEDs with the composite anodes of ITO-Au-V 2 O 5 are described. A thin oxide layer V 2 O 5 is used to modify the surface of Au for enhancing the hole injection from Au by the increase of work function to 5.3 eV and thus sequentially improves emission efficiency. The effects of V 2 O 5 layer on the enhancement of electrical properties of the bottom emitting OLEDs are discussed. Ultraviolet and X-ray photoelectron spectroscopy (UPS and XPS, respectively) analysis indicate that the higher work function of ITO/Au/V 2 O 5 (5.3 eV) than ITO/Au (5.0 eV) anode is due to Au surface band bending. Thus, the barrier for hole injection from ITO through Au/V 2 O 5 to the hole transport layer (HTL) is decreased. Our results show that the performance of OLEDs with V 2 O 5 layer is greatly improved compared with the case of only Au layer on the ITO. Interestingly, it is also better than the ITO anode modified by V 2 O 5 device.All devices were fabricated on ITO coated glass with a sheet resistance of 10 Ω/ , and thermally deposited LiF/Al was used as cathode. ITO substrate was cleaned and treated by O 2 plasma. The deposition was carried out at a pressure of less than 3 × 10 −4 Pa without any vacuum break. The organics and metal oxide were evaporated at the rate in a range of 0.3-0.4 nm/s. The Au metals were evaporated at the rate of ∼0.1 nm/s prior to the oxide and organic layer deposition. Al metal was evaporated at the rate of 0.3∼0.5 nm/s. The devices have an emissive area of 3.57 mm

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confidence: 99%

Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices

Zhang

Choy²

2008

IEEE Trans. Electron Devices

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“…Recently, there is a tendency to fabricate light-emitting devices from organic materials [1][2][3][4][5] compatible with silicon [6][7][8][9] to realize an efficient Si light source and hence the monolithic integration of electronics and photonics. 10) Such Si-based organic light-emitting devices (Si-OLEDs) can be made using simpler and cheaper techniques than those needed to create thin films of crystalline semiconductors on Si.…”

Section: Introductionmentioning

confidence: 99%

“…10) The reported Si-OLEDs usually comprise a combination of organic fluorescent materials with p-type Si; however, because of the limit of 25% quantum efficiency for fluorescent materials in the electroluminescence (EL) process and the overly strong hole injection ability of the bare ptype Si anode, the reported Si-OLEDs are so far not very efficient. [6][7][8][9] In this study, we combine organic phosphorescent materials [11][12][13][14] and the n þ -Si anode doped with Au to fabricate Si-OLEDs. Electrophosphorescent materials possess a theoretical 100% quantum efficiency; [11][12][13][14] Au-doped n þ -Si anode has an adjustable hole injection resulting in a much higher efficiency.…”

Section: Introductionmentioning

confidence: 99%

High-Efficiency Phosphorescent Organic Light-Emitting Diode with Au-Doped n⁺-Si Anode

Ran

Zhao

et al. 2008

jjap

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In Si photonics, the light source is a key. Here, we demonstrate a highly efficient Si-based light source, in which bis(2phenylpyridine) iridium(III) acetylacetonate [(ppy) 2 Ir(acac)] phosphor is used as emitters and a Au-doped n þ -Si is used as a hole-injection adjustable anode. This Si-based electrophosphorescent device achieves a power efficiency of 52.6 lm/W at 2.9 V, which corresponds to a power conversion efficiency of 10.0%, a level that is sufficient for commercial use.

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“…In the perspective of the OLED industry, Si-based OLEDs also have an important application in the fields of, for example, microdisplay and active-matrix display. Owing to the relatively high work function, Si including n-Si had been considered a suitable anode candidate for OLEDs [1][2][3][4][5][6][7]. However, it has been shown that the use of bare p-Si as anode usually causes too much hole injection [6,7].…”

Section: Introductionmentioning

confidence: 99%

Inverted top-emission organic light-emitting device with n-type silicon as cathode

Zhao¹,

Ran²,

Xu³

et al. 2008

J. Phys. D: Appl. Phys.

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Top-emission organic light-emitting devices (OLEDs) with configuration of n-Si (cathode)/Au : Sb 2 nm/Sm 4 nm/AlQ 60 nm/NPB 60 nm/V2O5 10 nm/Au 7 nm (anode) are reported on. We have found that high surface electron concentration and surface modification of n-Si are beneficial to the electron injection. The power efficiency of a device with a 10−3 Ω cm n-Si/Au : Sb cathode is 10 times more than that of a device with a 10 Ω cm n-Si/Au cathode. With an optimized thickness of V2O5, such a device exhibits much higher electroluminescence efficiency (0.8 lm W−1) than the conventional top-emission OLEDs with p-Si or n-Si anodes reported on previously (0.2 lm W−1).

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Organic light-emitting diodes with n-type silicon anode

Cited by 9 publications

References 27 publications

Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices

Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices

High-Efficiency Phosphorescent Organic Light-Emitting Diode with Au-Doped n⁺-Si Anode

Inverted top-emission organic light-emitting device with n-type silicon as cathode

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Organic light-emitting diodes with n-type silicon anode

Cited by 9 publications

References 27 publications

Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices

Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices

High-Efficiency Phosphorescent Organic Light-Emitting Diode with Au-Doped n+-Si Anode

Inverted top-emission organic light-emitting device with n-type silicon as cathode

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High-Efficiency Phosphorescent Organic Light-Emitting Diode with Au-Doped n⁺-Si Anode