Ordered-vacancy-enabled indium sulphide printed in wafer-scale with enhanced electron mobility

Jannat, Azmira; Yao, Qi-Feng; Zavabeti, Ali; Syed, Nitu; Zhang, Baoyue; Ahmed, Taimur; Kuriakose, Sruthi; Mohiuddin, M.; Pillai, Naresh; Haque, Farjana; Ren, Guanghui; Zhu, De Ming; Cheng, Ningyan; Du, Yi; Tawfik, Sherif Abdulkader; Spencer, Michelle J. S.; Murdoch, Billy J.; Wang, Lin-Lin; McConville, Christopher F; Walia, Sumeet; Daeneke, Torben; Zhu, Lianqing; Ou, Jian Zhen

doi:10.1039/c9mh01365b

Cited by 32 publications

(38 citation statements)

References 41 publications

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“…In this concept, the atomic-scale thick 2D surface oxide lm of a liquid indium alloy is employed for a further post-processing stage to synthesize 2D In 2 S 3 lms. 239 Waferscale synthesis of ordered-vacancy tetragonal In 2 S 3 ultra-thin nanostructures with the thickness down to the single unit cell limit is highly interesting since it enables the development of novel electronic and optoelectronic devices. In 2 S 3 is not a layered material, and thus the large-area synthesis of the ultrathin crystalline 2D In 2 S 3 lm is a challenging process.…”

Section: Gan and Inn Semiconducting Nanosheetsmentioning

confidence: 99%

“…In an innovative approach, indium was melted at 180 C inside a glovebox. 239 The oxygen concentration was kept at less than 100 ppm. Before the delamination of the surface oxide lm of indium, the natural surface oxide was removed prior to delamination of the fresh indium oxide lm from the surface of molten indium.…”

Section: Gan and Inn Semiconducting Nanosheetsmentioning

confidence: 99%

“…The printed In 2 O 3 lm was later transferred to a furnace and heated up to 350 C and 450 C for 15 min and exposed at the same time to sulphur gas via nitrogen as a transfer agent. 239 The materials characterization studies conrmed the development of crystalline 2D In 2 S 3 lms with ultra-thin thickness. The uniformly developed In 2 O 3 lm had a 2.5 nm thickness conrmed by AFM studies (Fig.…”

Section: Gan and Inn Semiconducting Nanosheetsmentioning

confidence: 99%

“…The device showed a high degree of reproducibility. 239 This device used the advantage of employment of an efficient ultra-thin transport channel with ordered vacancies. In this device, a single unit cell of a In 2 S 3 crystal is recognized as a 2D material with ordered vacancy compounds (OVCs).…”

Section: Applications Of 2d Films Of Liquid Metalsmentioning

confidence: 99%

“…In this device, a single unit cell of a In 2 S 3 crystal is recognized as a 2D material with ordered vacancy compounds (OVCs). 239 In this sandwiched 2D structure the inherently grown indium vacancies are embedded in an ordered style inside a tetragonal crystalline structure. This unique and well-ordered long-range vacancy structure produced a multiple band-like channel in the band of 2D lms that outstandingly improved the electron transport properties of the Bi 2 S 3 lm.…”

Section: Applications Of 2d Films Of Liquid Metalsmentioning

confidence: 99%

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State-of-the-art surface oxide semiconductors of liquid metals: an emerging platform for development of multifunctional two-dimensional materials

2021

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Section: Gan and Inn Semiconducting Nanosheetsmentioning

confidence: 99%

Section: Gan and Inn Semiconducting Nanosheetsmentioning

confidence: 99%

Section: Gan and Inn Semiconducting Nanosheetsmentioning

confidence: 99%

Section: Applications Of 2d Films Of Liquid Metalsmentioning

confidence: 99%

Section: Applications Of 2d Films Of Liquid Metalsmentioning

confidence: 99%

See 3 more Smart Citations

State-of-the-art surface oxide semiconductors of liquid metals: an emerging platform for development of multifunctional two-dimensional materials

2021

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Growth of 2D Materials at the Wafer Scale

Guo

Kim

et al. 2022

Advanced Materials

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der Waals (vdW) layered 2D materials are regarded as a very promising new material system to support postsilicon IC technologies because of their rich and excellent physical properties even with thickness at the atomic scale (<1 nm). [1][2][3] It has been reported that monolayer MoS 2 as a transistor channel can be effectively controlled using 1 nm length carbon nanotube gating. Electric field control on such a short channel can achieve MoS 2 transistors with excellent performance, including an on/off current ratio up to 10 6 and a subthreshold swing (SS) of 65 mV s −1 . [4] This indicates that 2D vdW semiconductors are promising candidates to replace silicon for continued downscaling.Many vdW layered 2D materials have been synthesized and explored since the graphene discovery in 2004. They include highly conductive graphene [1] and MXenes (atomic-thin transition metal carbides and nitrides), [5] transition metal chalcogenides (TMDCs, including both metallic [6] and semiconducting [2] ), 2D elemental semiconductors (black phosphorus (BP), [7] tellurium (Te) [8] ), 2D insulators (e.g., hexagonal boron nitride (h-BN) [9] and some oxides). [10] The large variety of vdW layered 2D materials provides a large potential for advanced 2D electronics.However, for scalable applications, all vdW layered 2D materials face a common challenge: transitioning from micrometer-scale 2D flakes to wafer-scale. [1,2,[11][12][13] This is necessary for scaling up 2D vdW materials application in the high-end semiconductor industry. The history of silicon wafer development and its significant impact on modern information technologies has already demonstrated the importance of a large wafer size for volume production at an acceptable cost. Some materials, such as graphene, [14] h-BN, [15] and TMDCs, [16] have been heavily explored for wafer-scale growth, but the reality is that wafer-scale film quality still has enormous space to improve, especially when compared to chip-grade single-crystalline silicon. Other materials such as MXenes, BP, Te, and vdW oxides, have only a few reported papers focusing on their wafer-scale growth. Hence, we feel that this timely review focusing on wafer-scale growth methods of relevant 2D vdW layered materials is urgently needed.The scope of this review is clarified in Figure 1, where the structures, properties, wafer-scale growth methods, and applications of representative vdW layered 2D materials. We begin by briefly introducing these 2D vdW layered materials and discuss Wafer-scale growth has become a critical bottleneck for scaling up applications of van der Waal (vdW) layered 2D materials in high-end electronics and optoelectronics. Most vdW 2D materials are initially obtained through top-down synthesis methods, such as exfoliation, which can only prepare small flakes on a micrometer scale. Bottom-up growth can enable 2D flake growth over a large area. However, seamless merging of these flakes to form large-area continuous films with well-controlled layer thickness and lattice orientation is still a sign...

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Two‐Step Synthesis of Large‐Area 2D Bi₂S₃ Nanosheets Featuring High In‐Plane Anisotropy

Messalea

Zavabeti

Mohiuddin

et al. 2020

Adv Materials Inter

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Abstract2D materials with high in‐plane anisotropy are rapidly emerging as a tantalizing class of nanomaterials with promising applications in nanoelectronics and optoelectronics since they provide an additional degree of freedom that can be exploited in device design. The large‐area synthesis of such materials remains however challenging since the anisotropic crystal structure renders identifying a suitable growth substrate to be difficult, while the nanosheets are usually too fragile for the exfoliation and transfer of macroscopic sheets. This work reports the scalable synthesis of highly crystalline, large‐area 2D Bi2S3 nanosheets using a novel liquid‐metal‐based synthesis approach. Ultrathin bismuth oxide sheets are exfoliated from molten bismuth followed by tube furnace sulfurization. The strategy effectively separates the formation of layered structures from the process of anisotropic crystallization, overcoming the shortcomings of established techniques. The synthesized nanosheets feature a highly anisotropic orthorhombic crystal structure with intraplane van der Waals gaps and a direct bandgap of ≈2.3 eV. The nanosheets are found to be highly photoconductive with a photoresponsivity of 8 A W−1. Bi2S3 channel‐based field effect transistors feature a maximum hole mobility of 28 cm2 V−1 s−1, highlighting the excellent electronic properties of the isolated nanosheets.

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Ordered-vacancy-enabled indium sulphide printed in wafer-scale with enhanced electron mobility

Abstract: The unique and long-range ordered-vacancy structure in wafer-scale grown single-unit-cell-thick In2S3 facilitates excellent electronic performance.

Cited by 32 publications

References 41 publications

State-of-the-art surface oxide semiconductors of liquid metals: an emerging platform for development of multifunctional two-dimensional materials

State-of-the-art surface oxide semiconductors of liquid metals: an emerging platform for development of multifunctional two-dimensional materials

Growth of 2D Materials at the Wafer Scale

Two‐Step Synthesis of Large‐Area 2D Bi₂S₃ Nanosheets Featuring High In‐Plane Anisotropy

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Ordered-vacancy-enabled indium sulphide printed in wafer-scale with enhanced electron mobility

Abstract: The unique and long-range ordered-vacancy structure in wafer-scale grown single-unit-cell-thick In2S3 facilitates excellent electronic performance.

Cited by 32 publications

References 41 publications

State-of-the-art surface oxide semiconductors of liquid metals: an emerging platform for development of multifunctional two-dimensional materials

State-of-the-art surface oxide semiconductors of liquid metals: an emerging platform for development of multifunctional two-dimensional materials

Growth of 2D Materials at the Wafer Scale

Two‐Step Synthesis of Large‐Area 2D Bi2S3 Nanosheets Featuring High In‐Plane Anisotropy

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Product

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Two‐Step Synthesis of Large‐Area 2D Bi₂S₃ Nanosheets Featuring High In‐Plane Anisotropy