Optimization of the Back Enhanced <sup>BE</sup>SOI MOSFET working as a charge-based BioFET sensor

Yojo, Leonardo S.; Rangel, Ricardo C.; Sasaki, K. R. A.; Mori, C. A. B.; Martino, João Antônio

doi:10.1109/s3s46989.2019.9320714

Cited by 4 publications

(7 citation statements)

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“…The fringing electric field effect is predominant in short L UD devices and it suppresses the effect of the charge presented in the deposited material, thus a poor sensitivity is obtained for the charge-based sensor. 27 This effect also explains the better results observed for shorter L UD devices in the permittivity-based sensor. However, the longer L UD devices became insensitive to the difference of dielectric constant of the material once the fringe front gate electrical field only affects the silicon channel near the front gate electrode.…”

Section: Results and Analysismentioning

confidence: 80%

“…The material charges electric field acts in the sense of increasing the induced carriers in the silicon channel, thus the drain current increased as a function of the |Q bio |. 27 The influence of each dimension of the device was evaluated for the charge-based sensor too. The gate electrode length, underlaps length, buried oxide, gate oxide and silicon film thicknesses were varied one at a time, taking as refence dimensions the fabricated transistor (t Si = 10 nm, t ox = 10 nm, t BOX = 200 nm and L = 1 μm), except the underlaps length (L UD = 1 μm).…”

Section: Results and Analysismentioning

confidence: 99%

“…10. 27 Figure 11 shows the current density distribution along the underlap region for the long L UD device, with the same V GF biases and in three different distances (d = 100 nm, 200 nm, 500 nm). In the cross-section distanced d = 100 nm it still possible to observe different distribution across the channel.…”

Section: Results and Analysismentioning

confidence: 99%

“…In the farthest cross-section taken from the front gate sidewall, the fringe electric field from the front gate electrode does not affect the current density distribution anymore. 27…”

Section: Results and Analysismentioning

confidence: 99%

“…Figure 9. Charge-based sensor drain current as a function of gate voltage.Long (L UD = 1 μm, left axis) and short (L UD = 50 nm, right axis) underlap devices 27. …”

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confidence: 99%

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Study of ^ΒΕSOI MOSFET Reconfigurable Transistor for Biosensing Application

Yojo

Rangel

Sasaki

et al. 2021

ECS J. Solid State Sci. Technol.

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The Back Enhanced SOI (BESOI MOSFET) is a planar reconfigurable device, which transistor type (n- or p-type) can be programed by the back-gate bias. This transistor is explored in this paper for biosensing application through numerical simulation, based on the fabricated device experimental results. The permittivity value and the charges inside the biomaterial deposited on the underlap region (between gate and source/drain contacts) influence the BESOI MOSFET drain current. The dimensions of the device were evaluated in order to optimize the sensitivity. Among the studied parameters, the underlap length was the most relevant parameter. For short underlap devices, the fringe electric field from the front gate electrode benefits the permittivity-based sensors, while long underlap length devices have a bigger sensitive area in which the charge-based sensor presented better results. Also, the n-type biased device presented higher sensitivity to positively charged materials, while the p-type biased one presented better result for negatively charged materials. The parameters optimization resulted in one order magnitude improvement of the sensitivity for the permittivity-based sensor, for both n- and p-type. As for the charge-based sensor, the optimized device presented twice as bigger sensitivity for the n-type, and at least eight times improvement for the p-type device. This fact represents an advantage of the BESOI structure as the type of the device can be chosen by the back-gate bias.

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Section: Results and Analysismentioning

confidence: 80%

Section: Results and Analysismentioning

confidence: 99%

Section: Results and Analysismentioning

confidence: 99%

“…In the farthest cross-section taken from the front gate sidewall, the fringe electric field from the front gate electrode does not affect the current density distribution anymore. 27…”

Section: Results and Analysismentioning

confidence: 99%

“…Figure 9. Charge-based sensor drain current as a function of gate voltage.Long (L UD = 1 μm, left axis) and short (L UD = 50 nm, right axis) underlap devices 27. …”

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confidence: 99%

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