Optimization of substrate temperature and characterization of tin oxide based transparent conducting thin films for application in dye-sensitized solar cells

Karthick, P.; Vijayanarayanan, Divya; Sridharan, M.; Kumar, Raju; Sanjeeviraja, C.; Jeyadheepan, K.

doi:10.1016/j.tsf.2017.04.003

Cited by 38 publications

(10 citation statements)

References 49 publications

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“…Where 'k' is the shape factor which is 0.94, 'λ ' is the wavelength of X-rays which is 1.5406 nm for CuK a , 'β ' is the full width at half maximum of diffraction peak measured in radians and 'θ ' is the Bragg's angle. The grain size estimated from the main peak (110) is 4.7 nm and the value is in tune with the reported values obtained from other wet chemical methods (4,11) . The reported crystallite size varies between 4.796 nm to 11.563 nm in the case of films prepared by Spray Pyrolysis (2) .…”

Section: Structural and Morphological Analysissupporting

confidence: 89%

“…Wide band gap (3.6 eV) semiconductor tin oxide (SnO 2 ) is a promising material for various technological applications due to its high optical transparency in the visible range of the electromagnetic spectrum with excellent electric conductivity and high chemical stability (1)(2)(3)(4)(5)(6)(7) . SnO 2 exhibits high conductivity due to intrinsic defects like oxygen deficiencies whereas in the stoichiometric form it behaves like a good insulator.…”

Section: Introductionmentioning

confidence: 99%

“…SnO 2 has been frequently used as resistive-type CO and H 2 gas sensors. The oxygen species with trapped negative charges existing in SnO 2 usually prompts an upward band bending and are hence promising sensing materials (2)(3)(4)7) . In TCO applications, both the surface and interface properties of SnO 2 plays a vital role (3,4) .…”

Section: Introductionmentioning

confidence: 99%

“…The oxygen species with trapped negative charges existing in SnO 2 usually prompts an upward band bending and are hence promising sensing materials (2)(3)(4)7) . In TCO applications, both the surface and interface properties of SnO 2 plays a vital role (3,4) . The films have also been employed in a wide range of applications like oxidation catalyst, liquid crystal displays, light emitting diodes, thin film resistors, dye-sensitized solar cells, n-type ohmic electrodes for ink-jet printable electronics, photo-detectors (2)(3)(4)(5)(6)(7) .…”

Section: Introductionmentioning

confidence: 99%

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Rapid Synthesis of SnO2 Thin Films using Monoethanolamine through Wet Chemical Route

Murali¹,

Arts²,

Remadevi³

2021

IJST

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Objectives: To develop a unique wet chemical process for the rapid synthesis of SnO 2 thin films and hence to study the structural, morphological, optical and electrical properties of the films. Methods/Analysis: Polycrystalline SnO 2 thin films having a thickness in the range of 800-1000 nm with crystallite size less than 5 nm were synthesized within a time of 20 minutes and without the need of post-annealing using SILAR technique. Lattice parameters, c/a ratio, cell volume, dislocation density, refractive index, extinction coefficient and porosity of the SnO 2 thin films were determined. Findings: Films have a coarse and porous surface morphology with very fine pores distributed nearly uniformly on the film surface. The crystallite size and strain developed in the SnO 2 films were computed by the Williamson-Hall technique. Microstrain developed in the films is of the order of 10 -3 . SnO 2 films exhibit nearly 70% transmittance in the visible region. The optical band gap of the SnO 2 films is 3.65 eV. The refractive index of the films varies from 2.05 to 2.30 in the 450-1900 nm wavelength range. SnO 2 films exhibit a resistivity in the order of 10 -1 Ωcm. Novelty: Reports a unique rapid wet chemical process for the direct preparation of crystalline SnO 2 thin films using monoethaolamine at a temperature of 80 0 C. Literature survey reveals that no other method has yielded such type of good quality SnO 2 thin films at this temperature and without post annealing or sintering. First time crystalline SnO 2 films were prepared by a wet chemical process within 20 minutes.

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Section: Structural and Morphological Analysissupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Rapid Synthesis of SnO2 Thin Films using Monoethanolamine through Wet Chemical Route

Murali¹,

Arts²,

Remadevi³

2021

IJST

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“…Films doped with Sb have a thermal stability limit of 150-200 °C [8,13], above which the phenomena described above are observed. The highest limit of thermal stability is observed in transparent electri cally conductive coatings based on tin oxide doped with Fwith a limit to the onset of thermal destruction from 400-450 °C [13,15,16]. Thus, it is SnO 2 films doped with fluorine, which combine both high electrical conductivity and the greatest stability considered above, are characte rized by thermal stability.…”

Section: Research Of Existing Solutions Of the Peoblemmentioning

confidence: 99%

Investigation of thermal stability, optical properties, phase and chemical composition of transparent conductive tin oxide films deposited by pyrolytic method on silica float glass

Iatsenko

Mishchenko

Kornilovych

2019

TAPR

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Об'єктом дослідження є прозоре електропровідне покриття на основі допованого фтором оксиду олова, осадженого на силікатному флоат-склі піролітичним методом. Однак, як в процесі виготовлення такого покриття, так і в процесі його експлуатації, спостерігається деградація його електропровідних властивостей. Це може бути наслідком зміни структури покриття під дією впливу деяких технологічних та експлуатаційних факторів, а саме: температури процесу, часу витримки, газового середовища в процесі нанесення та експлуатації прозорого електропровідного покриття. Проведені дослідження підтвердили значне підвищення електропровідності. Вони також виявили незначне зниження світлопропускання прозорих оксидно-олов'яних плівок, отриманих з введенням фториду амонію у якості допанту при піролізі 1M спиртових розчинів хлоридів Sn 2+ та Sn 4+ , що широко застосовуються як прекурсори для тримання таких покриттів. Так, при співвідношенні Sn 4+ /F = 10 у робочих розчинах зафіксовано мінімум питомого поверхневого опору на рівні 32 Ом/м 2. При цьому, виявлено зниження значення усередненого коефіцієнту світлопропускання в оптичному діапазоні довжин хвиль 0,2-6,0 мкм на 51 %, а у його видимій частині (0,4-0,8 мкм) на 11 %. Показано, що суттєвим фактором збільшення значень електричного опору як в технологічному процесі, так і під час експлуатаційних впливів є термічна деградація покриття. Отримані результати свідчать, що повторне нагрівання до температур понад 450 °С призводить до появи явища термічної деструкції електропровідних властивостей покриття. Так, протягом 1-годинної витримки за температури 550 °С збільшення питомого поверхневого опору збільшується в 2 рази і фіксується на рівні 68 Ом/м 2 після повного охолодження. Повторні цикли нагріву з вказаними параметрами призводять до значно меншого впливу, що може свідчити про стабілізацію процесів, які мають місце при термічній деструкції електропровідного покриття. Ключові слова: прозорі електропровідні покриття, флоат-скло, оксид олова допований фтором, термічна стабільність.

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Research and Application Progress of Conductive Films in Energy Storage Devices

Zhao

Xiong

et al. 2023

Adv Materials Technologies

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The shortage of fossil energy and the environmental pollution caused by its use promote the development of renewable clean new energy. Energy storage devices are the best choice to convert and store them into efficient and convenient electric energy, and the light weight of the conductive film plays an important role in energy storage devices. Conductive films as electronic conduction layers have become a research hotspot due to their high electronic conductivity, environment‐friendly, low cost, flexibility, transmittance, high chemical stability, good film forming, and excellent mechanical properties. The material selection, conductivity, preparation methods, and adhesion to the substrate of the conductive films all affect the performance of the energy storage devices. Herein, the conductive properties of conductive films of metal materials, carbon materials, conductive polymers, metal oxides, metal nitrides, and other compounds are reviewed. The application of conductive films as electron conduction layers in solar cells, supercapacitors, lithium‐ion batteries, and solid aluminum electrolytic capacitors is analyzed. The future development trend of conductive films in energy storage devices is prospected.

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Optimization of substrate temperature and characterization of tin oxide based transparent conducting thin films for application in dye-sensitized solar cells

Cited by 38 publications

References 49 publications

Rapid Synthesis of SnO2 Thin Films using Monoethanolamine through Wet Chemical Route

Rapid Synthesis of SnO2 Thin Films using Monoethanolamine through Wet Chemical Route

Investigation of thermal stability, optical properties, phase and chemical composition of transparent conductive tin oxide films deposited by pyrolytic method on silica float glass

Research and Application Progress of Conductive Films in Energy Storage Devices

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