DOI: 10.15282/jmes.9.2015.9.0157
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Abstract: This paper presents a study of optimizing input process parameters on leakage current (IOFF) in silicon-on-insulator (SOI) Vertical Double-Gate [1] Metal Oxide Field-Effect-Transistor (MOSFET) by using L36 Taguchi method. The performance of SOI Vertical DG-MOSFET device is evaluated in terms of its lowest leakage current (IOFF) value. An orthogonal array [2], main effects, signal-to-noise ratio (SNR) and analysis of variance (ANOVA) are utilized in order to analyze the effect of input process parameter variati…

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