Optimization of GD a-Si:H Film Property for Photovoltaic Devices by Means of the Cross Field Plasma Deposition Technique

Abstract

Amorphous Si:H films prepared by plasma deposition have been extensively studied for the purpose of practical applications to low cost solar cel-t" 1). Especially, a conversion efficiency more than 5% has recently come to be most commonly attained in a-Si:H solar cel1s2). However, for a further improvement of