Abstract:A systematic study has been made on the relationship between plasma deposition condition and electronic properties of a-Si: H film by employing the cross field plasma deposition technique. Three important processes of deposition mechanism, i.e. i) plasma decomposition, ii) transport of ionized and neutral radicals and iii) compiling of decomposed species were separately identified by this technique. Remarkable improvements in the film quality have been obtained, that is, AM 1 photoconductivity of more than 5×1… Show more
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