Optimization of GaN window layer for InGaN solar cells using polarization effect

Jani, Omkar; Jampana, Balakrishnam; Mehta, Mohit; Yu, Haiming; Ferguson, Ian T.; Opila, R. L.; Honsberg, Christiana B.

doi:10.1109/pvsc.2008.4922725

Cited by 14 publications

(13 citation statements)

References 17 publications

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“…Some assumptions were used to reduce the number of adjustable material parameters. First, InGaN has the wurtzite crystal structure and therefore both piezoelectric and spontaneous polarization, which can affect the charge distribution within each layer [17,34]. These effects were not included as it is difficult to make general statements about the strain in each layer, particularly when graded layers are used.…”

Section: Simulation Resultsmentioning

confidence: 99%

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Finite element simulations of compositionally graded InGaN solar cells

Brown¹,

Ager²,

Walukiewicz³

et al. 2010

Solar Energy Materials and Solar Cells

205

124

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Section: Simulation Resultsmentioning

confidence: 99%

“…One method around these problems is to use p-GaN/nIn x Ga 1 À x N heterojunctions instead of a homojunction [6,8,9,17]. In this design, a highly conductive p-type GaN layer provides the hole contact while absorption takes place in the lower bandgap In x Ga 1 À x N layer.…”

Section: Introductionmentioning

confidence: 99%

Finite element simulations of compositionally graded InGaN solar cells

Brown¹,

Ager²,

Walukiewicz³

et al. 2010

Solar Energy Materials and Solar Cells

205

124

View full text Add to dashboard Cite

“…Material with such high absorption coefficients can absorb about 63% of light within the first 100 nm. At least 500 nm thick InGaN epilayers are required for absorption of 95% of the incident light, which is difficult to realize due to technological issues such as non‐availability of lattice matched substrates and phase separation . Different device architectures have been employed to overcome these issues and to realize high efficiency InGaN based solar cells.…”

Section: Introductionmentioning

confidence: 99%

High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices

Puybaret

Gmili

et al. 2015

Physica Status Solidi (a)

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Nanoselective area growth (NSAG) of thick InGaN nanopyramid and nanostripe arrays was demonstrated using metal organic chemical vapor deposition. SiO2 nanopattern masks were fabricated using a simple and industry friendly e‐beam lithography process. One hundred nanometer thick InGaN is grown with perfect selectivity over patterned GaN templates. InGaN nanostructures are homogenously pyramidal in shape, are mostly free from intrinsic material defects, and show six smooth semipolar facets. Catholuminescence emission peaks from the nanostructures are stronger than those from planar InGaN, which is due to improvement in crystal quality. The emission peaks from nanostructures are considerably redshifted from 397 to 425 nm, confirming increase in In incorporation in the nanostructures from 7 to 9% indium in InGaN. The ability to incorporate more indium depending on the geometry of the patterns and to grow selectively defect‐free thick InGaN nanostructures via a simple patterning process offers a new route to develop monolithic InGaN‐based high efficiency solar cells.

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“…This is not an easy task. Reports of InGaN-based junctions with an In mole fraction exceeding 0.3 are rare [1] and the performance of InGaN-based photovoltaic cells, whatever the In content, still remain far from the theoretical ones [3][4][5][6]. Issues such as strong phase separation and relaxation of the layer due to lattice mismatch with the substrate, lead to InGaN layers with large dislocation density and In-clustering, even if absorbing layers in the form of a multiple quantum well [6] have been used to delay strain relaxation.…”

Section: Introductionmentioning

confidence: 99%