Optimization of Boron Diffusion for Screen Printed n-PERT Solar Cells

Mojrová, Barbora; Comparotto, Corrado; Kopecek, Radovan; Mihailetchi, Valentin D.

doi:10.1016/j.egypro.2016.07.129

Cited by 8 publications

(5 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The surface concentration (C S ) of boron increases from 3.8×10 19 atoms/cm 3 to 1.8×10 20 atoms/cm 3 when the depth is 0.15 μm, as figure 4 shows. This behavior of boron profile was also observed with diffusion using BBr 3 and performed in n-type silicon wafers and the sheet resistance was in the range of 60-70 Ω/, [33,34].…”

Section: Sheet Resistance and Doping Profilesupporting

confidence: 67%

Analysis of different conductive pastes to form the contact with the boron back surface field in PERT silicon solar cells

Zanesco¹,

Crestani²,

Moehlecke³

et al. 2019

Mater. Res. Express

View full text Add to dashboard Cite

The industrial production of solar cells of the PERC family is growing, because the potential to increase the efficiency due to the passivation of the rear face. The PERT solar cell is a cost-effective structure of the PERC configurations. The goal of this paper is to analyze the influence in the electrical parameters of different metal pastes used to form the contact with the boron back surface field of PERT solar cells passivated with silicon dioxide on both sides and developed with a cost-effective process. The boron doped BSF and phosphorus emitter were carried out with reduction of steps. Solar cells were processed with three different conductive pastes: (1) an aluminum paste (PV381), (2) a silver/aluminum paste (PV3N1) and (3) a silver paste (PV51G), with different viscosity and solids content. The pastes were produced by DuPont. The PV381 and PV3N1 pastes produced solar cells with the efficiency of 16.2% and 15.9%, respectively. The higher open circuit voltage was achieved with the aluminum paste, indicating that this paste is more effective to produce the selective back surface field. The PV51G paste is not suitable to form the rear contact.

show abstract

Section: Sheet Resistance and Doping Profilesupporting

confidence: 67%

Analysis of different conductive pastes to form the contact with the boron back surface field in PERT silicon solar cells

Zanesco¹,

Crestani²,

Moehlecke³

et al. 2019

Mater. Res. Express

View full text Add to dashboard Cite

show abstract

“…Such p+ emitters are found in passivated emitter rear totally diffused (PERT) and tunnel oxide passivated contact (TOPCon) cells using n‐base silicon. Because of the lower solubility, 8 B‐formed p + emitters tend to be of lower concentration, ~10 19 cm −3 , than the P‐diffused n + emitters of conventional BSF and PERC, ~10 20 cm −3 9,10 . This potentially leads to comparatively greater sensitivity of the cell to changes in the charge density of states resulting from charge motion in the passivating antireflective coatings.…”

Section: Introductionmentioning

confidence: 99%

“…Because of the lower solubility, 8 B-formed p + emitters tend to be of lower concentration, $10 19 cm À3 , than the P-diffused n + emitters of conventional BSF and PERC, $10 20 cm À3 . 9,10 This potentially leads to comparatively greater sensitivity of the cell to changes in the charge density of states resulting from charge motion in the passivating antireflective coatings. Yamaguchi et al 11 found PID-p in p+/n fronts of PERT cell mini modules occurred on the order of a minute (À1,000 V applied to cell, 85 C, face grounded with Al).…”

Section: Introductionmentioning

confidence: 99%

Impact of illumination and encapsulant resistivity on polarization‐type potential‐induced degradation on n‐PERT cells

Habersberger¹,

Hacke

2021

Progress in Photovoltaics

View full text Add to dashboard Cite

Power loss caused by polarization-type potential-induced degradation (PID-p) in a variety of high-performance photovoltaic cell types has been observed to be recoverable via subsequent illumination and in some cases preventable via simultaneous illumination. In this report, we describe the results of a study in which the front faces of n-PERT cells encapsulated in polymers with a broad range of electrical resistivity were exposed to varying and controlled irradiance during PID testing. For a low resistivity ethylene-vinyl acetate copolymer encapsulant, no reduction in the rate or extent of power loss was observed for irradiance as high as 1,000 W/m 2 , whereas for high and intermediate resistivity polyolefin encapsulants, 100 and 300 W/m 2 , respectively, prevented power loss. We introduce a simple model based on charge accumulation that facilitates interpretation of these results whereby degradation via charge accumulation under voltage stress and recovery due to light exposure are opposing and interdependent phenomena that describe the susceptibility of a module to power loss.

show abstract

“…2 Considering the manufacturing steps, the current PERC solar cell production lines are seen to be adaptable to the PERT solar cells due to the many similarities in the fabrication techniques, such as surface texturing, diffusion process, removal of the heavily doped rear surface, deposition of dielectric layers (ALD: Al 2 O 3 and PECVD: SiN x ), and metal screen printing. 5 PERT solar cells have already been extensively studied in the literature with various fabrication routes, particularly based on the doping method, such as diffusion furnace, 6,7 ion implantation, [8][9][10][11] atmospheric pressure chemical vapor deposition (APCVD), 12 plasma-enhanced chemical vapor deposition (PECVD), 13 spin-on doping, 14,15 or their use together. One of the challenges for the fabrication of PERT solar cells is the existence of the two doping steps for the rear and front surfaces, which necessitate protecting one side while doping the other at least once in the use of double-side doping methods such as furnace diffusion.…”

Section: Introductionmentioning

confidence: 99%

A comparative study on alternative industrial manufacturing routes for bifacial n‐PERT silicon solar cells

Bektaş,

Seyrek,

Keçeci

et al. 2023

Progress in Photovoltaics

View full text Add to dashboard Cite

Bifacial n‐PERT solar cells, taking advantage of the superior material quality of n‐type Si wafers and the high bifaciality potential of the design, can be fabricated by the existing industrial manufacturing methods. Here, we compare five alternative process flows to manufacture the bifacial n‐PERT solar cells. The complexities of their fabrication routes vary mainly according to the applied doping methods (either diffusion or ion implantation) and the rear side morphology (either alkaline textured or hardly etched pyramidal surface). We also analyze the performance of the devices fabricated by each process flow. Our results indicate that the solar cells with a B‐diffused emitter and P‐implanted BSF yield higher efficiencies than the others. In addition, the n‐PERT solar cells with hardly etched pyramidal rear surfaces have slightly higher efficiency than those with textured rear surfaces. Moreover, we studied the responses of the n‐PERT solar cells against the degradation and regeneration processes applied to boron‐doped p‐type Si solar cells under dark annealing, light soaking, and illuminated annealing. They are not significantly influenced by light‐induced degradation (LID); however, the fill factor (FF) value of the cell with hardly etched pyramidal rear surfaces is sensitive to the illuminated annealing process.

show abstract

Optimization of Boron Diffusion for Screen Printed n-PERT Solar Cells

Cited by 8 publications

References 3 publications

Analysis of different conductive pastes to form the contact with the boron back surface field in PERT silicon solar cells

Analysis of different conductive pastes to form the contact with the boron back surface field in PERT silicon solar cells

Impact of illumination and encapsulant resistivity on polarization‐type potential‐induced degradation on n‐PERT cells

A comparative study on alternative industrial manufacturing routes for bifacial n‐PERT silicon solar cells

Contact Info

Product

Resources

About