Optimisation of the electrochemical bath for growing device-quality CuInSe2 thin films

Abstract

The electrochemical bath used for growing device‐quality CIS (CuInSe2) thin films by co‐deposition as well as layer‐by‐layer (LBL) deposition was characterised and optimised with respect to the film properties. The bath composition was varied by changing the Cu, In and Se ion concentrations in specific ratios in both co‐deposition and LBL deposition. The film properties were analysed using techniques such as SEM (scanning electron microscopy), EPMA (electron probe microanalysis), AES (Auger electron spectroscopy) and XRD (X‐ray diffraction). The structural, morphological and compositional properties of the films were characterised and their variation is attributed to the bath composition and growth conditions. © 1998 John Wiley & Sons, Ltd.

Effects of post-heat treatment on the characteristics of chalcopyrite CuInSe2 film deposited by successive ionic layer absorption and reaction method

“…This result may be due to that Cu ions has a higher mobility and easily react with Se ions to form CuSe, while at the same time the solid-state reaction for the synthesis of CuInSe 2 does not take place and In 2 Se 3 phase may be still amorphous at such temperature. When T a ≥ 300°C, all XRD spectra exhibit a distinct peak at 2θ = 27.3°corresponding to (112) plane of chalcopyrite CuInSe2 (JCPDS-40-1487) [11,12].…”

Electrochemical Properties of Solid–Liquid Interface of CuIn[sub 1−x]Ga[sub x]Se[sub 2] Prepared by Electrodeposition with Various Gallium Concentrations

“…A classical three-electrode cell with Pt gauze was used as the counter electrode, an SCE as the reference electrode, and the CIGS thin film with a surface area of 0.283 cm 2 as the working electrode in a 0.1 M Na 2 SO 4 solution as the electrolyte. 20,21…”

Controlling Growth Chemistry and Morphology of Single-Bath Electrodeposited Cu(In,Ga)Se[sub 2] Thin Films for Photovoltaic Application

“…Electrodeposited CdTe PV devices have been successfully processed, reaching near commercial performance. 3 A number of groups have reported electrodeposition-based processing of CuInSe 2 and Cu͑In,Ga͒Se 2 films, employing a number of approaches: sequential deposition of individual metal films, 4 deposition of various precursors, [5][6][7] and single-step deposition, where all elements are deposited simultaneously. 8 Single-step deposition processes are appealing in order to simplify device manufacture.…”