1997
DOI: 10.1063/1.118824
|View full text |Cite
|
Sign up to set email alerts
|

Optically pumped lasing of ZnO at room temperature

Abstract: We report the observation of optically pumped lasing in ZnO at room temperature. Thin films of ZnO were grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates. Laser cavities formed by cleaving were found to lase at a threshold excitation intensity of 240 kW cm−2. We believe these results demonstrate the high quality of ZnO epilayers grown by molecular beam epitaxy while clearly demonstrating the viability of ZnO based light emitting devices.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

15
992
3
4

Year Published

2002
2002
2015
2015

Publication Types

Select...
9

Relationship

1
8

Authors

Journals

citations
Cited by 2,197 publications
(1,014 citation statements)
references
References 8 publications
15
992
3
4
Order By: Relevance
“…The typical spectral resolution of the PL data was ~0.25 meV and 0.1 meV for the data presented in figure1 and figures 2 & 4 respectively. 5 Reflectance measurements were performed using a Fourier-transform (FT) spectrometer fitted with a photomultiplier tube. Samples were studied at temperatures between 20 and 300 K using a closed-cycle cryostat.…”
Section: Ii: Experimental Detailsmentioning
confidence: 99%
See 1 more Smart Citation
“…The typical spectral resolution of the PL data was ~0.25 meV and 0.1 meV for the data presented in figure1 and figures 2 & 4 respectively. 5 Reflectance measurements were performed using a Fourier-transform (FT) spectrometer fitted with a photomultiplier tube. Samples were studied at temperatures between 20 and 300 K using a closed-cycle cryostat.…”
Section: Ii: Experimental Detailsmentioning
confidence: 99%
“…Most of the recent research on ZnO has concentrated on epitaxial growth of thin films and their properties, and device production was the driving motivation in many cases [4,5]. Many of the samples (grown by a range of methods) were polycrystalline.…”
Section: I: Introductionmentioning
confidence: 99%
“…ZnO has a wide direct band gap, which coupled with the large exciton binding energy (60 meV), makes it a candidate for a variety of optoelectronic device applications such as light emitting diodes, lasers and UV photo-detectors [1,2]. ZnO gas sensors have also been demonstrated, with sensitivity to a range of vapours including alcohols, water vapour, ammonia and hydrogen [3,4,5,6,7,8].…”
Section: Introductionmentioning
confidence: 99%
“…In the past decade, interest in zinc oxide (ZnO) has grown in the fields of optoelectronics, active-glass coatings and photovoltaics (PV), fueled by the potential applications of this highbandgap, high-exciton-binding-energy compound [1]. Regarding thin-film (TF) PV applications, ZnO is the compound of choice to achieve low-cost, reproducible electrode layers on large-scale production lines.…”
Section: Introductionmentioning
confidence: 99%