Optically active erbium centers in silicon

Przybylińska, H.; Jantsch, W.; Suprun-Belevitch, Yu.; Stepikhova, M. V.; Palmetshofer, L.; Hendorfer, G.; Kozanecki, A.; Wilson, Richard; Sealy, B.J.

doi:10.1103/physrevb.54.2532

Cited by 213 publications

(157 citation statements)

References 27 publications

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“…The choice of the annealing procedure depends, however, critically on the doping level. In particular, the point defects created by Er implantation are unusually stable and their removal requires annealing temperatures not lower than 900°C [6,12,17]. For high Er doses, however, such an annealing step results in the production of a heavily dislocated and twinned material, with a high concentration of erbium precipitates decorating the dislocations.…”

Section: Er Doping and Defect Characterization By High Resolution Spementioning

confidence: 99%

“…This wavelength coincides with the transition between the two lowest, spin-orbit split levels of the trivalent erbium ion, which has stimulated extensive investigations of Er doped semiconductors [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. The wavelength makes Si : Er an interesting candidate for a Si-based, integrable light source for optical communication.…”

Section: Introductionmentioning

confidence: 99%

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Erbium in Silicon: Possible Light Source for 1.5 μm and Challenge for Defect Physics

Jantsch

Przybylińska

1996

Acta Phys. Pol. A

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The trivalent erbium ion emits at 1.54 gm, independent of the host crystal and temperature. This fact makes Si : Er an interesting candidate for integrated optics in the optimum wavelength regime for fiber optic communication systems. Recent progress in improving the luminescence yield is reviewed and the limiting factors are discussed, namely: the low solubility of different Er centers, thermal quenching of the luminescence above 100 K, the mechanisms for energy transfer from the host crystal to the Er 4f shell and the process induced parasitic recombination channels.

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Section: Er Doping and Defect Characterization By High Resolution Spementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Erbium in Silicon: Possible Light Source for 1.5 μm and Challenge for Defect Physics

Jantsch

Przybylińska

1996

Acta Phys. Pol. A

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“…This creates new problems since the temperatures required for the annealing of Er-implanted Si (600-900°C) favour Er clustering or, at concentrations above 10 18 cm -3 , precipitation [5,6]. It is believed that the cubic Er center which dominates the PL of Erimplanted FZ Si is due to isolated Er on T sites [7]. When working with very low Er concentrations, even the small amount of O present in FZ Si can significantly modify the electrical properties of Er [4].…”

Section: Introductionmentioning

confidence: 99%

“…While, to our knowledge, no theoretical work has been published so far on the microscopic structure of Er-O complexes in Si, the formation of Er 2 O 3 -like centers was clearly observed in extended X-ray absorption fine structure (EXAFS) experiments [10,11] on Er-implanted Czochralski (CZ) Si annealed to 900°C. The PL spectrum of Er and O co-doped samples is usually dominated by Er-related centers having non-cubic symmetry [7] and the PL intensity of these centers is correlated with the O/Er ratio rather than the concentration of Er and O [12].…”

Section: Introductionmentioning

confidence: 99%

Lattice Sites and Stability of Implanted Er in FZ and CZ Si

et al. 1997

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We report on the lattice location of 167 Er in Si measured by conversion electron emission channeling. In both FZ and CZ Si, a high fraction of Er (>65%) occupies near-tetrahedral interstitial (T) sites directly following 60 keV room temperature implantation at doses of 6×10 12 cm -2 . For higher doses, the as-implanted near-T fractions of Er visible by emission channeling are smaller, due to the beginning of amorphization. Following the recovery of implantation damage at 600°C, more than 70% of Er is found on near-T sites in both FZ and CZ Si. In FZ Si, Er exhibits a remarkable thermal stability and only prolonged annealing for several hours reduces the near-T fraction. On the other hand, annealing of CZ Si at 900°C for more than 10 minutes results in the majority of Er probes in sites of very low symmetry or disordered surroundings.

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“…Previously, Si:Er visible light emitting diodes (LEDs) have been demonstrated [2]. Consequently, the optical activity of Er in Si has attracted special interest in association with potential applications of optical interconnects in Si chip technology [3][4][5][6]. One of the principal problems in the development of Er doped Si has been the strong quenching behavior of both the photo-and electroluminescence (EL) when in the range 77 K to room temperature [3,5].…”

Section: Introductionmentioning

confidence: 99%

Defect production in strained p-type Si1−xGex by Er implantation

Mamor

Pipeleers

Auret

et al. 2011

Journal of Applied Physics

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Strained p-Si 1-x Ge x (x = 5.3%, 10.2% and 15.4%) was irradiated at room temperature with 160 keV 166 Er 2+ ions to a fluence of 1×10 10 or 3×10 13 Er/cm 2 . The defects induced by ion implantation were investigated experimentally using high-resolution X-ray diffraction, Rutherford backscattering and channeling spectroscopy and deep level transient spectroscopy. X-ray diffraction indicates that the damage induced by Er implantation produces a slight perpendicular expansion of the SiGe lattice. For all compositions, channeling measurements reveal that Er implantation in pSi 1-x Ge x to a fluence of 3×10 13 Er/cm 2 induces an amorphous region below the Si 1-x Ge x surface.Annealing at 850°C for 30 s, results in a reduction in damage density, a relaxation of the implantation-induced perpendicular expansion of the SiGe lattice in the implanted region, while a more pronounced relaxation of the compressive strain SiGe is observed for higher Ge content (x = 0.10 and 0.15). On the other hand, for the annealed SiGe samples that were implanted with Er at the fluence of 10 10 Er/cm 2 , the compressive strain in the SiGe layer is nearly completely retained. Deep level transient spectroscopy studies indicate that two prominent defects with discrete energy levels above the valence band are introduced during Er implantation. Their activation energy was found to decrease with increasing Ge-content. However, the large local strain induced by high fluence Er implantation reduces the activation energy by 40 meV with respect to the low fluence Er implanted p-Si 1-x Ge x . This shift (40 meV) in the activation energy remains constant regardless of the Ge content, suggesting that the Si 1-x Ge x layers remained fully strained after Er implantation. The observed defects are further compared to those introduced by alpha particle irradiation and electron beam metal deposition. The results indicate that defects introduced by Er implantation have similar electronic properties as those of defects detected after electron beam deposition and alpha particle irradiation. Therefore, it is concluded that these defects are due to the Er implantation-induced damage and not to the Er species specifically.Electronic mail: mamor@squ.edu.om 2

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Optically active erbium centers in silicon

Cited by 213 publications

References 27 publications

Erbium in Silicon: Possible Light Source for 1.5 μm and Challenge for Defect Physics

Erbium in Silicon: Possible Light Source for 1.5 μm and Challenge for Defect Physics

Lattice Sites and Stability of Implanted Er in FZ and CZ Si

Defect production in strained p-type Si1−xGex by Er implantation

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