Optical properties of triplet states of excitons bound to interstitial-carbon interstitial-oxygen defects in silicon

Ishikawa, T.; Koga, K.; Itahashi, T.; Itoh, Kohei M.; Vlasenko, L. S.

doi:10.1103/physrevb.84.115204

Cited by 3 publications

(8 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The strong mixing with λ z spin-orbit coupling in the excited state enables a triplet signal with considerable intensity. According to our spin-orbit calculations, the intensity ratio of the triplet phosphorescence is 1% for the m S = 0 state in the triplet manifold, in good agreement with the experimental findings 31 . This results in about 1.4 ms radiative lifetime for this state.…”

Section: Optical Propertiessupporting

confidence: 90%

“…It provides a large stabilisation for the m S = 0 level, but is negligible for the other two sublevels, owing to the differences in the energy gaps. Thus, the axial ZFS parameter is modified to D = 5.7 GHz, which is in reasonable agreement with the ~3 GHz readout from the broad peaks in the magneto-PL spectrum 31 . The re-normalisation also leads to a strong mixing of the excited state singlet and triplet m S = 0 levels, manifesting as a 1% contribution of the triplet state to the excited singlet state.…”

Section: Spin Propertiessupporting

confidence: 74%

“…2a] according to the Franck-Condon principle. We obtain a sideband with LVMs at 63, 70 and 134 meV energies closely resembling the experimental spectrum 24,25,31 . We also observe an LVM at 87 meV, giving rise to a respective weak experimental signal [see Fig.…”

Section: Optical Propertiessupporting

confidence: 70%

“…It was assumed, that the triplet state is dark owing to the quenched orbital momentum of the hole by the defect strain field. However, this phosphorescence was detected at low temperatures despite the measured isotropic g-factor in the triplet state 31 .…”

Section: Introductionmentioning

confidence: 80%

See 3 more Smart Citations

An L-band emitter with quantum memory in silicon

et al. 2022

View full text Add to dashboard Cite

Fluorescent centres in silicon have recently attracted great interest, owing to their remarkable properties for quantum technology. Here, we demonstrate that the C-centre in silicon can realise an optically readable quantum register in the L-band wavelength region where the transmission losses in commercial optical fibres are minimal. Our in-depth theoretical characterisation confirms the assignment of the C-centre to the carbon-oxygen interstitial pair defect. We further explore its magneto-optical properties, such as hyperfine and spin-orbit coupling constants from first principles calculations, which are crucial for tight control of the quantum states of the triplet electron spin. Based on this data, we set up quantum optics protocols to initialise and read out the quantum states of the electron spin, and realise a quantum memory by transferring quantum information from the electron spin to proximate 29Si nuclear spins. Our findings establish an optically readable long-living quantum memory in silicon where the scalability of qubits may be achieved by CMOS-compatible technology.

show abstract

Section: Optical Propertiessupporting

confidence: 90%

Section: Spin Propertiessupporting

confidence: 74%

Section: Optical Propertiessupporting

confidence: 70%

Section: Introductionmentioning

confidence: 80%

See 2 more Smart Citations

An L-band emitter with quantum memory in silicon

et al. 2022

View full text Add to dashboard Cite

show abstract

“…Therefore, the recombination process is presumably inherently forbidden, for emample, requiring a spin flip from an initial S = 1 state to a S = 0 final state. From “pseudo‐donor”‐type defects in silicon like the C line (a carbon‐oxygen defect emitting at 0.79 eV) it is known, that the deeply bound hole can loosely bind an electron in EMT‐like shallow states and by coupling can form as initial states before recombination either a S = 1 triplet ground state (forbidden) or a S = 0 excited (allowed) state split by ≈2.5 meV . In the present case of the 2.08 eV band, the ultra‐long PL lifetime remains up to room temperature, what would require a singlet‐triplet splitting energy of some 25 meV and therefore appears as unrealistic.…”

Section: Resultsmentioning

confidence: 83%

Extremely Slow Decay of Yellow Luminescence in Be‐Doped GaN and Its Identification

Lamprecht

Thonke

Teisseyre

et al. 2018

Physica Status Solidi (b)

View full text Add to dashboard Cite

The extremely slowly decaying yellow luminescence band around 2.08 eV in GaN:Be:O is studied by continuous-wave and time-resolved photoluminescence, as well as photoluminescence excitation spectroscopy and absorption. The lifetime obtained for this process is around 2.2 s and is thermally quenched for temperatures between 250 and 400 K. From the photoluminescence excitation measurements, two major pumping thresholds at around 2.7 and 3.1 eV can be identified. We discuss the origin of the Be-related 2.08 eV transition as well as the origin of the overlaying photoluminescence bands at 1.88 and 2.12 eV.

show abstract

Solid-State Color Centers for Single-Photon Generation

Andrini,

Amanti,

Armani

et al. 2024

Photonics

View full text Add to dashboard Cite

Single-photon sources are important for integrated photonics and quantum technologies, and can be used in quantum key distribution, quantum computing, and sensing. Color centers in the solid state are a promising candidate for the development of the next generation of single-photon sources integrated in quantum photonics devices. They are point defects in a crystal lattice that absorb and emit light at given wavelengths and can emit single photons with high efficiency. The landscape of color centers has changed abruptly in recent years, with the identification of a wider set of color centers and the emergence of new solid-state platforms for room-temperature single-photon generation. This review discusses the emerging material platforms hosting single-photon-emitting color centers, with an emphasis on their potential for the development of integrated optical circuits for quantum photonics.

show abstract

Optical properties of triplet states of excitons bound to interstitial-carbon interstitial-oxygen defects in silicon

Cited by 3 publications

References 27 publications

An L-band emitter with quantum memory in silicon

An L-band emitter with quantum memory in silicon

Extremely Slow Decay of Yellow Luminescence in Be‐Doped GaN and Its Identification

Solid-State Color Centers for Single-Photon Generation

Contact Info

Product

Resources

About