Optical properties of photo-electrochemical etching of anisotropic silicon (110)

Abstract

Photo-electrochemical etched Si layers were prepared on n-type (110) oriented silicon wafer. SEM results shows groove structure for etched Si (110). The photoluminescence (PL), Fourier transformed infrared (FTIR) absorption and Raman spectroscopy of etched Si (110) as a function of etching time was studied. All samples showed a PL peak in the visible spectral and the intensity of the PL peak increases with rising of the etching time. It is also found that the Raman peak of the etched Si samples is red shifted and its intensity significantly decreases as the etching time increases.

Fabrication of InN based photodetector using porous silicon buffer layer

“…The appearance of the Si-H x vibrational bands is consistent with the expected PSi properties. 12 The InN spectrum shows a prominent peak centred at 486 cm 21 . This feature corresponds to the E 1 (TO) phonon mode of the InN.…”

“…18 This result might be attributed to the strain relaxation of InN as well as the excess nitrogen in the InN compound. 19 The lattice mismatch between the InN thin film and the PSi layer was calculated by comparing the (101) planes of InN and PSi using the following relation 20 12 The InN spectrum shows a prominent peak centred at 486 cm 21 . This feature corresponds to the E 1 (TO) phonon mode of the InN.…”

“…This additional peak was induced by transverse optical (2TO) phonon overtones. 12 This mode is due to the disorder present in photoelectrochemically etched Si around the pores during their formation. During etching, the dissolution process results in the formation of a layer of disordered amorphous Si immediately around the pores.…”

Comparative study on structural and optical properties of nitrogen rich InN on Si(110) and 6H-SiC

“…The band gap might increase with the increase in carrier concentration, which is referred to as the Moss-Burstein shift. 34,35 This effect occurs when the carrier concentration goes over the conduction band edge density of states, and the Fermi level is positioned within the conduction band. As a result, the Moss-Burstein shift leads to a higher value obtained for the band gap of N rich InN.…”

“…The Moss-Burstein shift is probably the most significant factor in our samples, consistent with the Raman results. 35 …”