Optical parametric oscillation in silicon carbide nanophotonics

Guidry, Melissa A.; Yang, Ki Youl; Lukin, Daniil M.; Markosyan, A. S.; Yang, Joshua; Fejer, M. M.; Vučković, Jelena

doi:10.1364/optica.394138

Cited by 125 publications

(98 citation statements)

References 36 publications

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“…In light of the recent technological advances in SiC photonics 51,52 , including the recent integration of single V Si into nanophotonic architectures 38 , our results suggest that the V Si is an excellent candidate for a scalable spectrally reconfigurable single-photon source. Furthermore, as this approach to spectral control of single-photon emission requires only a rapidly modulated optical transition, it should be applicable to other solid-state defects modulated either via the Stark effect 30,53,54 or acoustically 28,47 .…”

Section: Discussionmentioning

confidence: 86%

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

et al. 2020

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The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scattering-matrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons.

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Section: Discussionmentioning

confidence: 86%

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

et al. 2020

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“…Microcombs are compatible with wafer-scale manufacturing as well as hybrid integration with III-V/Si lasers 10 – 12 , and have already been used in various system-level demonstrations including coherent telecommunications 13 , 14 , astronomical spectrometer calibration 15 , 16 , ultrafast ranging 17 , 18 , massively parallel coherent LiDAR 19 , frequency synthesizers 20 , atomic clock architectures 21 , and neuromorphic computing 22 , 23 . Many integrated nonlinear photonic platforms for microcombs have emerged, ranging from Si 3 N 4 24 – 30 , diamond 31 , tantala 32 , and SiC 33 to highly nonlinear AlGaAs 34 , 35 and GaP 36 on insulator, as well as electro-optic platforms such as LiNbO 3 37 – 40 and AlN 41 – 43 .…”

Section: Introductionmentioning

confidence: 99%

High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits

et al. 2021

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Low-loss photonic integrated circuits and microresonators have enabled a wide range of applications, such as narrow-linewidth lasers and chip-scale frequency combs. To translate these into a widespread technology, attaining ultralow optical losses with established foundry manufacturing is critical. Recent advances in integrated Si3N4 photonics have shown that ultralow-loss, dispersion-engineered microresonators with quality factors Q > 10 × 106 can be attained at die-level throughput. Yet, current fabrication techniques do not have sufficiently high yield and performance for existing and emerging applications, such as integrated travelling-wave parametric amplifiers that require meter-long photonic circuits. Here we demonstrate a fabrication technology that meets all requirements on wafer-level yield, performance and length scale. Photonic microresonators with a mean Q factor exceeding 30 × 106, corresponding to 1.0 dB m−1 optical loss, are obtained over full 4-inch wafers, as determined from a statistical analysis of tens of thousands of optical resonances, and confirmed via cavity ringdown with 19 ns photon storage time. The process operates over large areas with high yield, enabling 1-meter-long spiral waveguides with 2.4 dB m−1 loss in dies of only 5 × 5 mm2 size. Using a response measurement self-calibrated via the Kerr nonlinearity, we reveal that the intrinsic absorption-limited Q factor of our Si3N4 microresonators can exceed 2 × 108. This absorption loss is sufficiently low such that the Kerr nonlinearity dominates the microresonator’s response even in the audio frequency band. Transferring this Si3N4 technology to commercial foundries can significantly improve the performance and capabilities of integrated photonics.

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“…SiC photonics has been developed for over a decade [19][20][21][22][23][24][25] , one of the major obstacles for the practical application is the difficulty of fabricating ultralow optical loss SiC thin films on the wafer-scale. 4H-silicon-carbide-on-insulator (4H-SiCOI) formed by ion-cutting technique has been optimized 26 .…”

Section: Introductionmentioning

confidence: 99%

“…A different approach based on thin-film epitaxy techniques enabled microresonators 20,21,27 with Qs up to 2.5 × 10 5 , which is still likely limited by the material absorption 27 . Very recently, SiC thin films prepare by thinning of bulk wafer was demonstrated to obtain Qs up to 1 million 23,25 . This method enables SiCOI substrates with the pristine material quality of bulk-SiC crystal, which represents a vital and significant progress toward the high-Q SiC photonics platform.…”

Section: Introductionmentioning

confidence: 99%

High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics

et al. 2021

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The realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies. Here, photonic microresonators with a mean Q factor of 6.75 × 106 were demonstrated on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, as determined by a statistical analysis of tens of resonances. Using these devices, broadband frequency conversions, including second-, third-, and fourth-harmonic generations have been observed. Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time, to the best of our knowledge. Meanwhile, by engineering the dispersion properties of the SiC microresonator, we have achieved broadband Kerr frequency combs covering from 1300 to 1700 nm. Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.

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Optical parametric oscillation in silicon carbide nanophotonics

Cited by 125 publications

References 36 publications

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits

High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics

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