“…The II-IV semiconductor nanostructures are potential candidates for advanced devices with much improved performance, e.g., bluegreen semiconductor diode lasers, light-emitting diodes (LEDs), bio-luminescence markers, etc. [1][2][3][4][5]. In the core/shell structure of the II-IV semiconductor nanocrystals (NCs), e.g., CdSe NCs (bandgap, E g ¼ 1.7 eV @ 300 K [6]), capped with a thin layer of a larger bandgap semiconductor, ZnS (E g ¼ 3.68 eV @ 300 K [6]), the holes are confined in the CdSe core due to passivation of the QDsurface by ZnS layer, but the electron wavefunction extends into the ZnS shell.…”