Abstract:Microwave plasma‐enhanced chemical vapor deposition (MWPECVD) is widely used for the growth of synthetic doped diamond for electronic and electrochemical applications. Recent results have shown the possible enhancement of phosphorus incorporation using the pulsed gas injection growth method. It is therefore important to understand the dynamics of precursor gases to optimize the dopants incorporation in diamond. In this work, the dynamic response of different gases (N2, CH4, and O2) impulses in hydrogen plasma … Show more
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