Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers

Abstract

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Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures

“…The resulting ultrahigh mobilities make highly-strained Ge a very exciting candidate for CMOS channels and ultra-fast MOSFETs within the established Si-fabrication technology processes. Since the strains at which this is predicted to occur have already been demonstrated [7][8][9] in nanostructures, these extraordinary increases in mobility are well within the reach of the current technology.…”

“…This strain has been achieved by growing a narrow strip of Ge on a (001) In x Ga 1Àx As alloy substrate. 7,25,26 The supplementary information of Ref. 6 (see reference within), and Ref.…”

“…While these strains are unsustainable in bulk material due to the growth of strain-relieving dislocations, they are readily achieved in nanoscale structures with dimensions less than the critical thickness. The first type of strain has recently been achieved on thin films of Ge grown on In x Ga 1Àx As substrates, 7 where direct gap photoluminesence has been observed. Strains of the second type have been experimentally surpassed in nanowires, 8,9 where strains up to 17% have been achieved.…”

Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies

“…The boundary conditions were given by the experimental values of the band gap and effective masses of InGaAs and the calculated band offsets from Ref. [23]. We used the boundary matching conditions from Harrison [24].…”

Redshift of the absorption edge in tensile-strained germanium layers

“…It is known that mechanical strain and nanostructuring change the energy band structure of semiconductor materials [1][2][3][4][5]. Thus, the authors of [6] reported that their photoconductivity measurements provide exper imental evidence of a reduction of the band gap in ten sile strained silicon to 0.59 eV.…”