Optical control of 14 GHz MMIC oscillators based on InAlAs/InGaAs HBTs with monolithically integrated optical waveguides

Optical injection locking of a 38-GHz-band InP-based HEMT oscillator using a 1.55-μm DSB-SC modulated lightwave

“…Indirect subharmonic optical injection locking of an IMPATT oscillator has been demonstrated up to 39 GHz [1]. Direct optical injection locking was reported at 14 GHz using an InAlAs/InGaAs HBT-based MMIC oscillator and a 1.55-m light source [5]. Since most investigations concerning optical fiber communications have concentrated on the 1.55-m wavelength, where the transmission loss of fiber is lowest, it is important to investigate InP-based heterostructure devices illuminated by 1.55-m light sources.…”

“…Several research groups have been working on optical injection locking technologies using microwave and mm-wave oscillators made with IMPATT, FET, and HBT devices [1]- [5]. Indirect subharmonic optical injection locking of an IMPATT oscillator has been demonstrated up to 39 GHz [1].…”

Optimization of photoswitch constituted of a coplanar line introducing an interdigitated MSM photodetector

“…Thereafter, several research studies have focused on the implementation on a single substrate of the optical command and microwave circuits. Monolithic integration of optical waveguides and microelectronic or microwave circuits has been explored in [12][13][14]. Among the most recent works, we can cite those performed on the use of a photoswitch based on low temperature GaAs (LT-GaAs) for the sampling function [15,16].…”

Characteristics of an InGaP/AlXGa1−XAs/GaAs composite-emitter heterojunction bipolar transistor (CEHBT)

“…1-4 Furthermore, they have been used widely for monolithic microwave integrated circuit ͑MMIC͒ and optoelectronic integrated circuit ͑OEIC͒ applications in recent years. 5,6 In previous studies of GaAs-based HBTs, the InGaP-GaAs and AlGaAs-GaAs material systems were usually employed. The Al X Ga 1−X As/ GaAs material system showed some advantages such as excellent lattice match with varied aluminum content and mature epitaxial growth technology.…”