Optical band gap tuning and study of strain in CdS thin films

Ortuño-López, M.B.; Sotelo-Lerma, M.; Mendoza-Galván, A.; Ramı́rez-Bon, R.

doi:10.1016/j.vacuum.2004.07.038

Cited by 79 publications

(34 citation statements)

References 6 publications

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“…E where α is the absorption coefficient ( (4 / ) k α π λ = ) and E is the photon energy [15] we obtain a bandgap of (2.75 ± 0.01) eV for the films deposited onto DSO while the bandgap for the films deposited onto Nb:STO is blue-shifted by 50 meV. Such a behaviour (the smaller the lattice parameter the higher the bandgap) [16] support assumption of a smaller in-plane lattice parameters for BFO films when deposited onto STO. These results were also confirmed by Raman spectroscopy [17] In the case of the films deposited onto Nb:STO the A 1 phonon bands of BFO at ~ 135 cm -1 and ~175 cm -1 are shifted by ~ 3 cm -1 to higher wavenumbers as compared to the BFO films on DSO.…”

Section: Resultsmentioning

confidence: 85%

Optical characterisation of BiFeO₃ epitaxial thin films grown by pulsed‐laser deposition

Himcinschi

Vrejoiu

Friedrich

et al. 2010

Phys. Status Solidi (c)

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Epitaxial thin films of bismuth ferrite, BiFeO3, were deposited by pulsed laser deposition (PLD) on SrTiO3 (100), Nb‐doped SrTiO3 (100) and DyScO3 (110) substrates. Ellipsometric spectra are obtained in the energy range 0.73‐9.5 eV by combining Variable Angle Spectroscopic Ellipsometry (VASE) and vacuum ultraviolet (VUV) ellipsometry with synchrotron radiation. The optical constants of BiFeO3 films were determined by analysing the ellipsometric spectra with a model that describes the optical response of a system consisting of air, film and substrate. The shift towards higher energies of the refractive index and extinction coefficient of the film deposited onto Nb‐doped SrTiO3 as compared with that deposited onto DyScO3 was attributed to a more compressive in‐plane epitaxial strain. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 85%

Optical characterisation of BiFeO₃ epitaxial thin films grown by pulsed‐laser deposition

Himcinschi

Vrejoiu

Friedrich

et al. 2010

Phys. Status Solidi (c)

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“…CdS is also called the window layer in the CdTe solar cell structure because of its relatively large band gap energy (∼ 2.42 eV). 2 In the last several years the highest cell efficiency for small-area CdTe solar cell has been increased sharply from 16.5% to 21.5%. 3 Also the highest efficiency of the large-area commercial modules fabricated by the First Solar Company was increased to 18.6%, approaching the efficiency of single-crystalline Si module.…”

Section: Introductionmentioning

confidence: 99%

Cu-doped CdS and its application in CdTe thin film solar cell

Deng

Yang

et al. 2016

AIP Advances

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Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

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“…The positive Dc and negative Da values indicate that the (002)-oriented ZnO films are under compressive stress. 22 Cross-sectional and topography SEM images of the ZnO films deposited at 5 mTorr and 8 mTorr are shown in Fig. 3a and b, respectively.…”

Section: Methodsmentioning

confidence: 99%

Effect of Sputtered ZnO Layers on Behavior of Thin-Film Transistors Deposited at Room Temperature in a Nonreactive Atmosphere

Medina-Montes

Lee

Perez

et al. 2011

Journal of Elec Materi

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In this work we present the electrical characterization of ZnO-based thin-film transistors fabricated at room temperature. The ZnO films were deposited by radiofrequency magnetron sputtering at variable argon pressure (3 mTorr to 10 mTorr) at room temperature. The sputtered ZnO films were polycrystalline with hexagonal structure and electrical resistivity ranging from 10 1 X cm to 10 8 X cm for films deposited from 3 mTorr to 10 mTorr. The trend in the electrical behavior of the devices was found to be due to the variation of the electron concentration of the ZnO films. The devices with better performance showed a field-effect mobility of 2.9 cm 2 /Vs, threshold voltage of 20 V, I on / I off % 10 6 , and electrical resistivity of $10 8 X cm. In addition, linear behavior of I on /I off with deposition pressure was observed. The lowest I on /I off ratio ($2) was calculated for devices with ZnO layers deposited at 3 mTorr, and the highest ratio ($10 6 ) for devices processed at 10 mTorr. Hall-effect measurements were performed on ZnO films showing the lowest resistivity. The layer grown at 3 mTorr showed a Hall mobility of l H = 8.9 cm 2 /Vs and carrier concentration of n = 4.2 9 10 16 cm À3 with resistivity of q = 31.8 X cm. For films deposited at 5 mTorr, the Hall mobility, carrier concentration, and resistivity were l H = 7.9 cm 2 /Vs, n = 3.4 9 10 16 cm À3 , and q = 38.4 X cm, respectively. Films deposited at 8 mTorr and 10 mTorr could not be measured due to their high resistance.

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Optical band gap tuning and study of strain in CdS thin films

Cited by 79 publications

References 6 publications

Optical characterisation of BiFeO₃ epitaxial thin films grown by pulsed‐laser deposition

Optical characterisation of BiFeO₃ epitaxial thin films grown by pulsed‐laser deposition

Cu-doped CdS and its application in CdTe thin film solar cell

Effect of Sputtered ZnO Layers on Behavior of Thin-Film Transistors Deposited at Room Temperature in a Nonreactive Atmosphere

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Optical band gap tuning and study of strain in CdS thin films

Cited by 79 publications

References 6 publications

Optical characterisation of BiFeO3 epitaxial thin films grown by pulsed‐laser deposition

Optical characterisation of BiFeO3 epitaxial thin films grown by pulsed‐laser deposition

Cu-doped CdS and its application in CdTe thin film solar cell

Effect of Sputtered ZnO Layers on Behavior of Thin-Film Transistors Deposited at Room Temperature in a Nonreactive Atmosphere

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Optical characterisation of BiFeO₃ epitaxial thin films grown by pulsed‐laser deposition

Optical characterisation of BiFeO₃ epitaxial thin films grown by pulsed‐laser deposition