Optical band gap and refractive index dispersion parameters of In–Se–Te amorphous films

Improvement of the electrical properties of Se3Te1 thin films by In additions

“…Different compositions of In x (Se 3 Te 1 ) 100 − x thin films were prepared on to ultrasonic cleaned glass substrate (microscope slides) as well as those detailed here [29]. The amorphous state of the material was confirmed by a diffractometric X-ray scan (Philips diffractometer 1710) using Cu as target and Ni as filter (λ = 1.542 Å).…”

“…The details for the electrical and photoelectrical measurements were described in Ref. [29]. The intensity of the light source was measured with the help of a photocell (CdS PDV-P8001).…”

“…The dc dark conductivity (σ dc ) in most of the chalcogenide glassy thin films can be written as [29]:…”

“…where ΔE ph is the activation energy for photoconduction [29]. The plots of ln σ ph versus 1000/T at the applied electric field of 4 × 10 3 V cm −1 and at relative light intensity (G= 1.0) for In x (Se 3 Te 1 ) 100−x (x= 0, 2, 4, 6, 8 and 10 at.%) thin films were shown in Fig.…”

Spectral distribution of photoelectrical current and free carrier life time of Tex(Sb10Se90)100−x thin films

“…The measured transmittance spectrum was used to calculate the optical constants such as film thickness and the complex index of refraction (real, n, and imaginary part, k, where n is the refractive index and k is the extinction coefficient). Where the envelope method successfully applied, these optical constants were calculated with high accuracy [27][28][29].…”