Optical and electrical properties of laser doped Si:B in the alloy range

Bhaduri, Ayana; Kociniewski, T.; Fossard, F.; Boulmer, J.; Débarre, D.

doi:10.1016/j.apsusc.2011.10.077

Cited by 13 publications

(7 citation statements)

References 17 publications

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“…Please note that in all experiments, the photoemission of unreconstructed heavily doped diamond surfaces could be analyzed as representative of the bulk of the crystal. Finally, since most free carrier concentrations given in tables 1 and 2 correspond to a plasmon frequency p lying in the near or mid-infrared range, optical spectroscopies have also been applied to SnTe and 100 GeTe, as well as to heavily doped silicon 114 and diamond [115][116][117] . A simple interpretation of the plasmon edge within the Drude model has been found sufficient in most cases to yield carrier concentrations and damping factors = -1 typical of overdamped dilute metals, with relaxation times  in the 0.2 to 10 fs range fully compatible with the mean free path values given in table 2, generally lower than 1 nm in diamond, as confirmed by ARPES measurements 111 .…”

Section: D Normal State Propertiesmentioning

confidence: 99%

Superconductivity in doped semiconductors

Bustarret

2015

Physica C: Superconductivity and its Applications

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International audienceA historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike

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Section: D Normal State Propertiesmentioning

confidence: 99%

Superconductivity in doped semiconductors

Bustarret

2015

Physica C: Superconductivity and its Applications

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“…1(b)). This could be attributed to the imperfect dopant diffusion in the melted layer induced by a single laser shot, as was already shown in Si:B laser doped systems, 14 confirming the necessity of an efficient doping process.…”

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confidence: 77%

“…14,15 As the dose of active dopants is determined exclusively by the number of laser shots, the doping depth can be independently tuned by controlling the laser energy. Above the Ge melting threshold ($250 mJ/cm 2 ), we can thus linearly increase the melted depth up to a few hundreds of nanometers.…”

mentioning

confidence: 99%

“…1-a). Because of the short pulse duration and the high recrystallization speed, high phosphorous concentrations, larger than the solubility limit (∼ 1×10 19 cm −3 ) 12 , can be obtained by multiple process repetitions 13,14 . As the dose of active dopants is determined exclusively by the number of laser shots, the doping depth can be independently tuned by controlling the laser energy.…”

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confidence: 99%

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Laser doping for ohmic contacts in n-type Ge

Chiodi

Chepelianskii

Gardès

et al. 2014

Applied Physics Letters

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We achieved ohmic contacts down to 5 K on standard n-doped Ge samples by creating a strongly doped thin Ge layer between the metallic contacts and the Ge substrate. Thanks to the laser doping technique used, Gas Immersion Laser Doping, we could attain extremely large doping levels above the solubility limit, and thus reduce the metal/doped Ge contact resistance. We tested independently the influence of the doping concentration and doped layer thickness, and showed that the ohmic contact improves when increasing the doping level and is not affected when changing the doped thickness. Furthermore, we characterised the doped Ge/Ge contact, showing that at high doping its contact resistance is the dominant contribution to the total contact resistance.Comment: 4 pages, 3 figure

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“…[18][19][20][21][22] Here we address both of these challenges by developing a new fabrication method for efficient silicon light-emitting diodes using an original doping technique, gas immersion laser doping (GILD), and investigate spin-dependent recombination in silicon LEDs (SiLEDs). The GILD process [23][24][25][26] allows us to reach doping levels well beyond the solubility threshold which, as we describe below, gives rise to efficient emission, while retaining the well-defined planar geometry necessary to align electric and magnetic fields. Using our SiLEDs, we find that when classical MR effects are suppressed, electroluminescence can be substantially enhanced under a magnetic field near room temperature.…”

Section: Introductionmentioning

confidence: 99%

Room temperature magneto-optic effect in silicon light-emitting diodes

et al. 2018

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In weakly spin–orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, e.g. on the electro-luminescence of molecular semiconductors. Although silicon has weak spin–orbit coupling, observing spin-dependent recombination through magneto-electroluminescence is challenging: silicon’s indirect band-gap causes an inefficient emission and it is difficult to separate spin-dependent phenomena from classical magneto-resistance effects. Here we overcome these challenges and measure magneto-electroluminescence in silicon light-emitting diodes fabricated via gas immersion laser doping. These devices allow us to achieve efficient emission while retaining a well-defined geometry, thus suppressing classical magnetoresistance effects to a few percent. We find that electroluminescence can be enhanced by up to 300% near room temperature in a seven Tesla magnetic field, showing that the control of the spin degree of freedom can have a strong impact on the efficiency of silicon LEDs.

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Optical and electrical properties of laser doped Si:B in the alloy range

Cited by 13 publications

References 17 publications

Superconductivity in doped semiconductors

Superconductivity in doped semiconductors

Laser doping for ohmic contacts in n-type Ge

Room temperature magneto-optic effect in silicon light-emitting diodes

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