Operating Temperature Trends in Amorphous In–Ga–Zn–O Thin-Film Transistors

Hoshino, Ken; Wager, John F.

doi:10.1109/led.2010.2049980

Cited by 26 publications

(14 citation statements)

References 10 publications

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“…In the legend S means “solution processed” (data compiled from refs. 66, 78–276 only dealing with GIZO TFTs, the ones corresponding to solution process are in Tables 2a, b and c.…”

Section: Recent Progress Of N‐type Oxide Tftsmentioning

confidence: 99%

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

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“…In the legend S means “solution processed” (data compiled from refs. 66, 78–276 only dealing with GIZO TFTs, the ones corresponding to solution process are in Tables 2a, b and c.…”

Section: Recent Progress Of N‐type Oxide Tftsmentioning

confidence: 99%

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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“…Thin film transistors based on amorphous oxide films (OxTFTs) have attracted tremendous interest as TFT backplanes in active-matrix organic light emitting diodes (OLEDs) and liquid crystal displays owing to their high mobilities. [1][2][3][4][5][6][7] Intensive developments on oxide compounds including InO x -based, [8][9][10][11][12][13] ZnO x -based, 14 SnO x -based 15 and mixed channel materials such as InZnO x -based OxTFTs [16][17][18][19][20][21][22][23][24][25] have been widely studied in OxTFTs in recent decades because of their excellent electrical stabilities and high mobilities. Among them, InGaZnO (IGZO) 1,2,26 and InSnZnO (ITZO) 18,19 are currently being developed for use as commercial TFT backplanes because of their superior properties and high electron mobilities.…”

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confidence: 99%

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

et al. 2015

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The stable operation of transistors under a positive bias stress (PBS) is achieved using Hf incorporated into InOx-based thin films processed at relatively low temperatures (150 to 250 °C). The mobilities of the Hf-InOx thin-film transistors (TFTs) are higher than 8 cm2/Vs. The TFTs not only have negligible degradation in the mobility and a small shift in the threshold voltage under PBS for 60 h, but they are also thermally stable at 85 °C in air, without the need for a passivation layer. The Hf-InOx TFT can be stable even annealed at 150 °C for positive bias temperature stability (PBTS). A higher stability is achieved by annealing the TFTs at 250 °C, originating from a reduction in the trap density at the Hf-InOx/gate insulator interface. The knowledge obtained here will aid in the realization of stable TFTs processed at low temperatures.

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“…Takechi et al 6 ascribed the lower threshold voltage at higher temperatures to the generation of oxygenvacancies. Hoshino et al 7 explained this observation attributed to the more populated conduction band states with temperature elevation. The similar trend is also observed in this study.…”

Section: Environment-dependent Thermal Instability Of Sol-gel Derivedmentioning

confidence: 95%

Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors

Chung

Chang

et al. 2011

Applied Physics Letters

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The environment-dependent electrical performances as a function of temperature for sol-gel derived amorphous indium-gallium-zinc-oxide ͑a-IGZO͒ thin film transistors are investigated in this letter. In the ambients without oxygen, thermal activation dominates and enhances device performance. In oxygen-containing environments, mobility and drain current degrades and the threshold slightly increase as temperature increases. We develop a porous model for a-IGZO film relating to the drain current and mobility lowering due to film porosity and oxygen adsorption/penetration. It also relates to the threshold voltage recovery at high temperature owing to the varying form of adsorbed oxygen and the combination of oxygen and vacancies.

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Operating Temperature Trends in Amorphous In–Ga–Zn–O Thin-Film Transistors

Cited by 26 publications

References 10 publications

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors

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