One Volt Organic Transistor

Abstract

ute to the electronic transitions lower in energy. [17] This brings the expected reverse-bias turn-on potential into the range of 2.3±1.6 V, which is in reasonable agreement with the experimentally observed potential of 2.0 V. Hence, in reverse bias no current was observed until the bias overcame a potential approximately equal to the difference between the electron affinity of TiO 2 and the ionization potential of PAN, which suggests that a p±n junction was formed at the PAN/TiO 2 interface. shown to exhibit the characteristics of a built-in p±n junction at the TiO 2 /PAN interface. These concentric shell structures were grown on metal nanowires by a simple, low-temperature, adsorption method using a combination of ªin-membraneº and ªon-wireº layer-by-layer assembly. A rectification ratio > 120 has been observed at 3 V, which represents a significant improvement over simpler, ªon-wireº, semiconductor-particle diodes.[8] The characteristics we observed are close to those found in p±n junctions formed by crossing p-and n-type single-crystal Si nanowires [3b] and InP nanowires, [3e] although the rectification ratio is still inferior to that of single-crystal p-Si/n-GaN nanowire cross-point diodes.[3a] A strong similarity in the thickness, morphology, and electrical properties of films grown on metal nanowires and on planar substrates was found. This emphasizes the versatility of the wet, layer-bylayer, adsorption method. In particular, the availability of rectifying tube-shells on metal nanowires, which can be assembled into various kinds of cross-point structures, opens up the possibility of constructing logic gates and more complex circuits by means of electrofluidic, microfluidic, or chemically driven nanowire assembly. One Volt Organic Transistor** By Leszek Artur Majewski, Raoul Schroeder, and Martin Grell* Organic field-effect transistors (OFETs) promise cheap, flexible, and disposable ªplasticº electronics. Performance of organic electronics will be limited by the lower carrier mobility compared to inorganic semiconductors; however, there are a large number of potential OFET applications that require only moderate computing power, but demand low price.A major problem that hinders the development of practical OFET devices is that current devices require rather high voltages to operate, while in a typical low-end application, the COMMUNICATIONS 192

Overview of electroceramic materials for oxide semiconductor thin film transistors

“…In addition, the interface properties between the semiconductor channel layer and gate insulator are considered key parameters for improving reliability as well as performance (e.g., charge trap density, threshold voltage, and sub-threshold swing) of the TFTs. In particular, the operation voltage of TFTs is determined by the capacitance level, which is directly related to the dielectric constant and the thickness of dielectric layers [74][75][76]. According to Eqs.…”

Remarkable reduction in the threshold voltage of pentacene-based thin film transistors with pentacene/CuPc sandwich configuration

“…[7][8][9][10] To lower power consumption, low V T is a basic requirement. Hence, methods to reduce OTFTs V T have been developed, including the use of ultrathin or high dielectric constant insulators, [11][12][13] the improvement of metal/organic and organic/dielectric interfaces, [14][15][16][17][18][19][20] and the optimization of device configuration. 21,22 A previous study lowered the V T of copper phthalocyanine (CuPc) TFTs from −13.8 V to −8.9 V using a double layer of active organic semiconductors of CuPc and cobalt phthalocyanine in sandwich configuration.…”

High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

“…Nevertheless, the leakage current is also very high. In such cases, multi-component dielectric system combining inorganic and organic dielectric films showed better performances 10,11 of the devices. Organic nature of interface between active channel and dielectric layer may provide a more efficient capacitive coupling with the channel, perhaps because of better matching in surface energy of these materials.…”

“…6,12 Such high performance OFETs are demonstrated using polymer-treated inorganic dielectrics. 10,12 Polyvinyl alcohol (PVA), poly (methyl methacrylate) (PMMA), poly(4-vinylphenol) (PVP) [13][14][15] are frequently utilized as organic component of dielectric polymer for OFETs fabrication.…”