2007
DOI: 10.1016/j.elecom.2007.03.024
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One dimensional macropore-array formation on low doped n-type silicon

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Cited by 11 publications
(7 citation statements)
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“…This accords well with our previous finding, [30] where an interpretation has been given. Hence, this work can reveal that the conclusions obtained from 1D pores [27,28,31] also remain effective for 2D pores, simply due to one important nature, self-organization, possessed by both 1D and 2D pores. However, the correlation between optimal etching bias and [HF] was not investigated in our previous works (concerning 1D pores): [27,28,31] this work, with a focus on fast 2D pore formation, thus exhibits some new and critical results.…”
Section: Nomentioning
confidence: 81%
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“…This accords well with our previous finding, [30] where an interpretation has been given. Hence, this work can reveal that the conclusions obtained from 1D pores [27,28,31] also remain effective for 2D pores, simply due to one important nature, self-organization, possessed by both 1D and 2D pores. However, the correlation between optimal etching bias and [HF] was not investigated in our previous works (concerning 1D pores): [27,28,31] this work, with a focus on fast 2D pore formation, thus exhibits some new and critical results.…”
Section: Nomentioning
confidence: 81%
“…3(b)), breakdown around pore-tips occurred. [15,28] In order to evaluate the ratio of photo-current to breakdown-current, the I-V characteristics were measured (Fig. 5).…”
Section: Discussionmentioning
confidence: 99%
“…Very regular macropore array was initially found by Lehmann and Föll in 1990, [1] but to date, some of the detailed formation mechanisms are still open to discussion. [41] As is well known, illuminating the back side of n-type silicon generates electron-hole pairs. The electrons are extracted by the back-side contact, whereas the holes (minority carriers in n-Si) diffuse from the back side through the wafer to the interface between silicon and electrolyte.…”
Section: The Deviation From Scr Modelmentioning
confidence: 99%
“…[28−39] In regard to macropore formation on n-type silicon, a marked deviation from SCR model was recently evidenced. [40,41] However, such a deviation has not been investigated in detail since to date relevant works focus primarily on the pore formation on linear nuclei. [40,41] To the best of our knowledge, on unpatterned samples or on samples pre-patterned with point nuclei, the detailed investigation of possible deviation from theory has not been carried out yet.…”
Section: Introductionmentioning
confidence: 99%
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