On the Way to the Investigation of Hydrogen in GaN: Hydrogen in Nitrogen Doped GaP and GaAs

Clerjaud, B.; Côté, D.; Hahn, W.-S.; Lebkiri, Ahmed; Ulrici, W.; Wasik, D.

doi:10.1002/1521-396x(199701)159:1<121::aid-pssa121>3.0.co;2-p

Cited by 28 publications

(12 citation statements)

References 21 publications

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“…Several complexes of hydrogen with oxygen, carbon, and nitrogen have already been investigated and some knowledge about their structure is available. [1][2][3][4][5][6] However, up to now there is no evidence for a boronhydrogen complex neither in GaAs nor in other III-V compounds. It has to be noted that substitutional boron ͑B Ga ͒ is an isoelectronic impurity, i.e., it is neutral in the GaAs lattice and should not attract charged hydrogen.…”

Section: Introductionmentioning

confidence: 98%

Evidence of a sulfur-boron-hydrogen complex in GaAs grown by the liquid encapsulation Czochralski technique

Ulrici¹,

Clerjaud²

2004

Phys. Rev. B

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In LEC-grown GaAs:S, two vibrational absorption lines are measured at 2382.2 and 2392.8 cm −1 ͑T =7 K͒ and assigned to 11 B-H and 10 B-H stretching modes. Uniaxial stress experiments reveal that the symmetry of the responsible complex is C s. Bond strength considerations suggest that this complex is a S As-B Ga pair passivated by hydrogen bonded to boron. The constituents of this S-B-H complex are located within a {110} plane.

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Section: Introductionmentioning

confidence: 98%

Evidence of a sulfur-boron-hydrogen complex in GaAs grown by the liquid encapsulation Czochralski technique

Ulrici¹,

Clerjaud²

2004

Phys. Rev. B

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“…4 Several groups have suggested that the hydrogenated defect of interest involves one N and two H atoms. [5][6][7][8][9][10] Furthermore, recent IR data 11 show that each of the two hydrogens interacts strongly with the nitrogen. Calculations predict that a ͑111͒ oriented H 2 * defect, with N substituted for As, one H bond-centered, and one H interstitial next to N, is stable.…”

Section: Introductionmentioning

confidence: 99%

Structure and vibrational properties ofN−H2complexes in GaAs:N

et al. 2005

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Considerable attention has been focused on GaAs:N since it was discovered that the addition of nitrogen to gallium arsenide leads to a surprisingly large reduction in its band gap and changes in its electronic properties. Equally surprising was the discovery that subsequent hydrogenation largely negates these effects, generating a material whose properties are similar to those of GaAs. Infrared studies of the hydrogenated defect indicate that it contains two hydrogen atoms. Despite the efforts that have been made to understand these effects, there is to date no satisfactory model for the structure of the pertinent nitrogen-dihydrogen defect. We have investigated theoretically several possible models for this defect and suggest that a strong candidate is a nitrogendihydrogen complex of C 1h symmetry in which the two hydrogens are in specific inequivalent locations. Ab initio calculations using CRYSTAL2003 predict that this structure is indeed metastable, and while some issues remain unresolved, the relative magnitudes of the resulting force constants are consistent with those required in mass-and-spring models to fit experimental vibrational data.

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“…The defect structures affect the absorption wavenumber of infrared (IR) light. Some N-H related LVMs in GaAs and GaAsN have been reported, and the IR absorption frequen-cies vary depending on the growth methods: wavenumbers 3079.2, 2947.4, 1984.3, 1010.1, and 983.3 cm ¹1 have been reported for N-doped GaAs grown through the liquid encapsulation Czochralski method (LEC), 15,18,19) wavenumbers 3125 and 3101 cm ¹1 have been reported for In 0.025 -GaAsN 0.002 grown through MOCVD, 13) and wavenumbers 3195, 2967, 2868, 2015, 1447, and 1058 cm ¹1 have been reported for GaAsN grown through the molecular beam epitaxy (MBE) with H + treatment. 13,20) These results indicate that there are several types of N-H defects in GaAs-related materials and that the formation of these defects is strongly affected by the growth method.…”

Section: Introductionmentioning

confidence: 99%

N–H related defects in GaAsN grown through chemical beam epitaxy

Ohshita

Ikeda

Suzuki

et al. 2014

Jpn. J. Appl. Phys.

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The local vibration modes of N–H related defects in GaAsN are studied using isotopes. When GaAsN is grown through chemical beam epitaxy (CBE) using triethylgallium/tris(dimethylamino)arsenic/monomethylhydrazine gas, there are several local vibration modes (LVMs) in Fourier transform infrared (FTIR) spectra. Signals with stretching mode peaks at 2952, 3098, and 3125 cm−1 are reported, along with new wagging and stretching mode peaks at 960 and 3011 cm−1, which exist only in crystals grown through CBE. When the film is grown using deuterated MMHy as a nitrogen source, new peaks at 2206, 2302, 2318, 2245, and 714 cm−1 appear. This suggests that D related defects are created because of the deuterated MMHy. The ratios of frequencies of these new peaks to those obtained from crystals grown using MMHy are nearly 1.34. This suggests that all defects in GaAsN grown through CBE, which appear as LVMs, are N–H related defects. Especially, those with LVMs at 960 and 3011 cm−1 are new N–H defects only found in GaAsN grown through CBE.

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On the Way to the Investigation of Hydrogen in GaN: Hydrogen in Nitrogen Doped GaP and GaAs

Cited by 28 publications

References 21 publications

Evidence of a sulfur-boron-hydrogen complex in GaAs grown by the liquid encapsulation Czochralski technique

Evidence of a sulfur-boron-hydrogen complex in GaAs grown by the liquid encapsulation Czochralski technique

Structure and vibrational properties ofN−H2complexes in GaAs:N

N–H related defects in GaAsN grown through chemical beam epitaxy

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