2017
DOI: 10.1134/s1027451017020252
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On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light

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Cited by 18 publications
(6 citation statements)
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“…The speed v1(t) in the case when the acceleration is linear is as follows Since the acceleration u(t) is equal to the product of the velocity, it can be written as 11) and is divisible by a continuous function for all 𝑑𝑑 ∈ (𝑑𝑑 0 ; 𝑇𝑇). This circumstance contributes to a more perfect study of the processes [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34].…”
Section: Resultsmentioning
confidence: 99%
“…The speed v1(t) in the case when the acceleration is linear is as follows Since the acceleration u(t) is equal to the product of the velocity, it can be written as 11) and is divisible by a continuous function for all 𝑑𝑑 ∈ (𝑑𝑑 0 ; 𝑇𝑇). This circumstance contributes to a more perfect study of the processes [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34].…”
Section: Resultsmentioning
confidence: 99%
“…This connection was more pronounced in photocells having a low dopant concentration with the formation of low energy levels. For example, on heat-treated photocells, impurities in the original silicon (boron or phosphorus), which form small energy levels, go into the compensation position [28][29][30][31]. As a result of interaction with impurities that form deep energy levels, the values of U o.c.v.…”
Section: Experimental Results and Their Discussionmentioning
confidence: 99%
“…For large factories of hoisting and transport equipment, such metal savings could be 2000 tons per year, which is equivalent to an additional production of 100 cranes [43][44][45][46][47][48][49][50][51][52][53][54][55][56][57].…”
Section: Discussionmentioning
confidence: 99%