On the mechanism of ultrasonic loading effect in silicon-based Schottky diodes

Olikh, O. Ya.; Voytenko, K. V.

doi:10.1016/j.ultras.2015.12.001

Cited by 10 publications

(4 citation statements)

References 20 publications

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“…The extracted and literature values are shown in Table 1 for porous silicon samples and in Table 2 for silicon nanowires arrays. Thermal conductivity of the porous silicon samples decreases with porosity according to the following expression: 𝜅 𝑠 = (1 − 𝑃) 3 𝜅 𝑆𝑖 . 36 As one can see, the heat capacity also decreases with increasing porosity of the layer.…”

Section: Resultsmentioning

confidence: 99%

“…Silicon-based materials are "sine qua non" in micro/nano/opto-electronics [1][2][3][4][5] . The continuous size reduction of such devices and the growing aspect of their efficient integration naturally lead to improve thermal management.…”

Section: Introductionmentioning

confidence: 99%

“…= (1 − ) 3 . 36 As one can see, the heat capacity also decreases with increasing porosity of the layer.…”

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confidence: 99%

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Thermal properties study of silicon nanostructures by photoacoustic techniques

Dubyk

Nychyporuk

Lysenko

et al. 2020

Journal of Applied Physics

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The photoacoustic method with piezoelectric detection for the simultaneous evaluation of the thermophysical properties is proposed. The approach is based on the settling of an additional heat sink for redistribution of heat fluxes deposited on the sample surface. Firstly, the approach was tested on the porous silicon with welldefined morphology and well-studied properties. Then, heat capacity and thermal conductivity of silicon nanowires arrays have been investigated by recovering the experimental data through numerical simulations. The decrease of heat capacity and effective thermal conductivity of the samples upon increasing thickness and porosity of the sample is observed. Such behavior could be caused by the increase of the structure heterogeneity. In particular, this can be related to larger disorder (increased density of broken nanowires and larger porosity) that appears during the etching process of the thick layers.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Thermal properties study of silicon nanostructures by photoacoustic techniques

Dubyk

Nychyporuk

Lysenko

et al. 2020

Journal of Applied Physics

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show abstract

“…Ultrasound is used to induce a diode effect in Re x Mn 1-x S (Re=Yb, Tm) [22] and in Mo/n-n⁺-Si [23][24] structures. It is assumed that this effect is due to the thermionic emission (at high temperature) and the phonon-assisted tunneling (at low temperature).…”

Section: Introductionmentioning

confidence: 99%